DatasheetsPDF.com

HRD50N06K

SemiHow
Part Number HRD50N06K
Manufacturer SemiHow
Description N-Channel MOSFET
Published Mar 26, 2016
Detailed Description HRD50N06K_HRU50N06K HRD50N06K / HRU50N06K 60V N-Channel Trench MOSFET FEATURES  Originative New Design  Superior Aval...
Datasheet PDF File HRD50N06K PDF File

HRD50N06K
HRD50N06K

Overview
HRD50N06K_HRU50N06K HRD50N06K / HRU50N06K 60V N-Channel Trench MOSFET FEATURES  Originative New Design  Superior Avalanche Rugged Technology  Excellent Switching Characteristics  Unrivalled Gate Charge : 40 nC (Typ.
)  Extended Safe Operating Area  Lower RDS(ON) : 11.
5 mΩ (Typ.
) @VGS=10V  100% Avalanche Tested December 2014 BVDSS = 60 V RDS(on) typ = 11.
5mΩ ID = 40 A D-PAK I-PAK 2 1 3 HRD50N06K 1 2 3 HRU50N06K 1.
Gate 2.
Drain 3.
Source Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS EAR PD Drain-Source Voltage Drain Current Drain Current Drain Current – Continuous (TC = 25℃) – Continuous (TC = 100℃) – Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Power Dissipation (TA = 25℃)* Power Dissipation (TC = 25℃) - Derate above 25℃ 60 40 * 28 * 140 * ±20 145 3.
9 3 39 0.
26 TJ, TSTG TL Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds -55 to +175 300 * Drain current limited by maximum junction temperature Units V A A A V mJ mJ W W W/℃ ℃ ℃ Thermal Resistance Characteristics Symbol Parameter RθJC Junction-to-Case RθJA Junction-to-Ambient* RθJA Junction-to-Ambient * When mounted on the minimum pad size recommended (PCB Mount) Typ.
---- Max.
3.
8 50 110 Units ℃/W ◎ SEMIHOW REV.
A2,December 2014 HRD50N06K_HRU50N06K Electrical Characteristics TJ=25 °C unless otherwise specified Symbol Parameter Test Conditions Min Typ Max Units On Characteristics VGS Gate Threshold Voltage Static Drain-Source RDS(ON) On-Resistance VDS = VGS, ID = 250 ㎂ VGS = 10 V, ID = 15 A 2.
2 -- gFS Forward Transconductance Off Characteristics VDS = 20, ID = 15 A -- BVDSS IDSS IGSS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current VGS = 0 V, ID = 250 ㎂ VDS = 48 V, VGS = 0 V VDS = 48 V, TJ = 125℃ VGS = ±20 V, VDS = 0 V 60 ---- D...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)