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HRU72N06K

SemiHow
Part Number HRU72N06K
Manufacturer SemiHow
Description N-Channel MOSFET
Published Mar 26, 2016
Detailed Description HRD72N06K_HRU72N06K HRD72N06K / HRU72N06K 60V N-Channel Trench MOSFET FEATURES  Originative New Design  Superior Aval...
Datasheet PDF File HRU72N06K PDF File

HRU72N06K
HRU72N06K

Overview
HRD72N06K_HRU72N06K HRD72N06K / HRU72N06K 60V N-Channel Trench MOSFET FEATURES  Originative New Design  Superior Avalanche Rugged Technology  Excellent Switching Characteristics  Unrivalled Gate Charge : 75nC (Typ.
)  Extended Safe Operating Area  Lower RDS(ON) : 5.
8 mΩ (Typ.
) @VGS=10V  100% Avalanche Tested Jan 2015 BVDSS = 60 V RDS(on) typ = 5.
8mΩ ID = 100 A D-PAK I-PAK 2 1 3 HRD72N06K 1 2 3 HRU72N06K 1.
Gate 2.
Drain 3.
Source Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS EAR PD Drain-Source Voltage Drain Current Drain Current Drain Current – Continuous (TC = 25℃) – Continuous (TC = 100℃) – Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Power Dissipation (TA = 25℃)* Power Dissipation (TC = 25℃) - Derate above 25℃ 60 100 * 70 * 350 * ±25 415 11 3 110 0.
73 TJ, TSTG TL Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds -55 to +175 300 * Drain current limited by maximum junction temperature Units V A A A V mJ mJ W W W/℃ ℃ ℃ Thermal Resistance Characteristics Symbol Parameter RθJC Junction-to-Case RθJA Junction-to-Ambient* RθJA Junction-to-Ambient * When mounted on the minimum pad size recommended (PCB Mount) Typ.
---- Max.
1.
4 50 110 Units ℃/W ◎ SEMIHOW REV.
A0,Jan 2015 HRD72N06K_HRU72N06K Electrical Characteristics TJ=25 °C unless otherwise specified Symbol Parameter Test Conditions Min Typ Max Units On Characteristics VGS Gate Threshold Voltage Static Drain-Source RDS(ON) On-Resistance VDS = VGS, ID = 250 ㎂ VGS = 10 V, ID = 40 A 2.
2 -- gFS Forward Transconductance Off Characteristics VDS = 20, ID = 40 A -- BVDSS IDSS IGSS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current VGS = 0 V, ID = 250 ㎂ VDS = 48 V, VGS = 0 V VDS = 48 V, TJ = 125℃ VGS = ±25 V, VDS = 0 V 60 ---- Dynamic Char...


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