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HRLD125N06K

Part Number	HRLD125N06K
Manufacturer	SemiHow
Description	N-Channel MOSFET
Published	Mar 26, 2016
Detailed Description	HRLD125N06K_HRLU125N06K HRLD125N06K / HRLU125N06K 60V N-Channel Trench MOSFET FEATURES  Originative New Design  Super...
Datasheet	HRLD125N06K PDF File

Overview

HRLD125N06K_HRLU125N06K HRLD125N06K / HRLU125N06K 60V N-Channel Trench MOSFET FEATURES  Originative New Design  Superior Avalanche Rugged Technology  Excellent Switching Characteristics  Unrivalled Gate Charge : 50 nC (Typ.
)  Extended Safe Operating Area  Lower RDS(ON) : 10 mΩ (Typ.
) @VGS=10V  Lower RDS(ON) : 12 mΩ (Typ.
) @VGS=4.
5V  100% Avalanche Tested December 2014 BVDSS = 60 V RDS(on) typ = 10 mΩ ID = 70 A D-PAK I-PAK 2 1 3 HRD125N06K 1 2 3 HRU125N06K 1.
Gate 2.
Drain 3.
Source Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS EAR PD Drain-Source Voltage Drain Current Drain Current Drain Current – Continuous (TC = 25℃) – Continuous (TC = 100℃) – Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Power Dissipation (TA = 25℃)* Power Dissipation (TC = 25℃) - Derate above 25℃ 60 70 * 49 * 245 * ±25 145 9.
4 3 94 0.
63 TJ, TSTG TL Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds -55 to +175 300 * Drain current limited by maximum junction temperature Units V A A A V mJ mJ W W W/℃ ℃ ℃ Thermal Resistance Characteristics Symbol Parameter RθJC Junction-to-Case RθJA Junction-to-Ambient* RθJA Junction-to-Ambient * When mounted on the minimum pad size recommended (PCB Mount) Typ.
---- Max.
1.
6 50 110 Units ℃/W ◎ SEMIHOW REV.
A0,December 2014 HRLD125N06K_HRLU125N06K Electrical Characteristics TJ=25 °C unless otherwise specified Symbol Parameter Test Conditions Min Typ Max Units On Characteristics VGS RDS(ON) Gate Threshold Voltage Static Drain-Source On-Resistance gFS Forward Transconductance Off Characteristics VDS = VGS, ID = 250 ㎂ VGS = 10 V, ID = 15 A VGS = 4.
5 V, ID = 10 A VDS = 15, ID = 15 A 1.
0 ---- BVDSS IDSS IGSS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current VGS = 0 V, ID = 250 ㎂ VDS =...

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HRLD125N06K N-Channel MOSFET - SemiHow

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