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HRLU150N10K

Part Number	HRLU150N10K
Manufacturer	SemiHow
Description	N-Channel MOSFET
Published	Mar 26, 2016
Detailed Description	HRLD150N10K_HRLU150N10K HRLD150N10K / HRLU150N10K 100V N-Channel Trench MOSFET FEATURES Originative New Design Supe...
Datasheet	HRLU150N10K PDF File

Overview

HRLD150N10K_HRLU150N10K HRLD150N10K / HRLU150N10K 100V N-Channel Trench MOSFET FEATURES Originative New Design Superior Avalanche Rugged Technology Excellent Switching Characteristics Unrivalled Gate Charge : 80 nC (Typ.
) Extended Safe Operating Area Lower RDS(ON) : 13 Pȍ (Typ.
) @VGS=10V Lower RDS(ON) : 14 Pȍ (Typ.
) @VGS=4.
5V 100% Avalanche Tested Jan 2015 BVDSS = 100 V RDS(on) typ = 13 Pȍ ID = 70 A D-PAK I-PAK 2 1 1 32 3 HRLD150N10K HRLU150N10K 1.
Gate 2.
Drain 3.
Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS EAR PD Drain-Source Voltage Drain Current Drain Current Drain Current – Continuous (TC = 25୅) – Continuous (TC = 100୅) – Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Power Dissipation (TA = 25୅)* Power Dissipation (TC = 25୅) - Derate above 25୅ 100 70 * 49 * 245 * ρ20 265 11 3 110 0.
73 TJ, TSTG TL Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds -55 to +175 300 * Drain current limited by maximum junction temperature Units V A A A V mJ mJ W W W/୅ ୅ ୅ Thermal Resistance Characteristics Symbol Parameter RșJC RșJA Junction-to-Case Junction-to-Ambient* RșJA Junction-to-Ambient * When mounted on the minimum pad size recommended (PCB Mount) Typ.
---- Max.
1.
4 50 110 Units ୅/W క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͡͝ͻΒΟ͑ͣͦ͑͢͡ HRLD150N10K_HRLU150N10K Electrical Characteristics TJ=25 qC unless otherwise specified Symbol Parameter Test Conditions Min Typ Max Units On Characteristics VGS RDS(ON) Gate Threshold Voltage Static Drain-Source On-Resistance gFS Forward Transconductance Off Characteristics VDS = VGS, ID = 250 Ꮃ VGS = 10 V, ID = 30 A VGS = 4.
5 V, ID = 15 A VDS = 15, ID = 30 A 1.
0 ---- BVDSS IDSS IGSS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current VGS = 0 V, ID = 250 Ꮃ VDS = 80 V, VGS ...

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