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KDS127U

KEC
Part Number KDS127U
Manufacturer KEC
Description SILICON EPITAXIAL PLANAR DIODE
Published Mar 26, 2016
Detailed Description SEMICONDUCTOR TECHNICAL DATA ULTRA HIGH SPEED SWITCHING APPLICATION. FEATURES Low Forward Voltage Fast Reverse Recovery ...
Datasheet PDF File KDS127U PDF File

KDS127U
KDS127U

Overview
SEMICONDUCTOR TECHNICAL DATA ULTRA HIGH SPEED SWITCHING APPLICATION.
FEATURES Low Forward Voltage Fast Reverse Recovery Time Small Total Capacitance Ultra- Small Surface Mount Package MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING UNIT Maximum (Peak) Reverse Voltage VRM 80 V Reverse Voltage VR 80 V Maximum (Peak) Forward Current IFM 300 * mA Average Forward Current IO 100 * mA Surge Current (10ms) IFSM 2* A Power Dissipation PD 200** mW Junction Temperature Tj 150 Storage Temperature Range Tstg -55 150 * Where D1, D2, D3, D4 are used independently or simultaneously, the Maximum Ratings per diode are 50% of those of the single diode.
** Total Rating A A1 CC KDS127U SILICON EPITAXIAL PLANAR DIODE H B B1 1 6 DIM MILLIMETERS A 2.
00+_ 0.
20 2 5 A1 1.
3+_ 0.
1 B 2.
1+_ 0.
1 3 4 D B1 1.
25+_ 0.
1 C 0.
65 D 0.
2+0.
10/-0.
05 G 0-0.
1 H 0.
9+_ 0.
1 T T 0.
15+0.
1/-0.
05 G 1.
D1 ANODE 2.
D2 CATHODE 3.
D3/D4 ANODE/CATHODE 4.
D3 ANODE 5.
D4 CATHODE 6.
D1/D2 ANODE/CAT...


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