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P4C1281

Part Number	P4C1281
Manufacturer	PYRAMID
Description	STATIC CMOS RAM
Published	Mar 26, 2016
Detailed Description	FEATURES Full CMOS, 6T Cell High Speed (Equal Access and Cycle Times) – 12/15/20/25 ns (Commercial) – 15/20/25/3...
Datasheet	P4C1281 PDF File

Overview

FEATURES Full CMOS, 6T Cell High Speed (Equal Access and Cycle Times) – 12/15/20/25 ns (Commercial) – 15/20/25/35 ns (Industrial) – 20/25/35/45 ns (Military) Low Power Operation 5V ± 10% Power Supply P4C1281/P4C1282 ULTRA HIGH SPEED 64K X 4 cmos STATIC RAMS Separate Inputs and Outputs – P4C1281 Input Data at Outputs during Write – P4C1282 Outputs in High Z during Write Fully TTL Compatible Inputs and Outputs Standard Pinout (JEDEC Approved) – 28-Pin 300 mil DIP, SOJ – 28-Pin 350 x 550 mil LCC DESCRIPTION The P4C1281 and P4C1282 are 262,144-bit (64Kx4) ultra high-speed static RAMs similar to the P4C1258, but with separate data I/O pins.
The P4C1281 features a transparent write operation; the outputs of the P4C1282 are in high impedance during the write cycle.
The RAMs operate from a single 5V ± 10% tolerance power supply.
Access times as fast as 12 nanoseconds are available, permitting greatly enhanced system operating speeds.
CMOS is used to reduce power ...

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