DatasheetsPDF.com

MB3035S

Vishay
Part Number MB3035S
Manufacturer Vishay
Description Schottky Barrier Rectifier
Published Mar 27, 2016
Detailed Description www.vishay.com M(B,I)3035S, M(B,I)3045S Vishay General Semiconductor Schottky Barrier Rectifier TO-220AB TO-263AB K ...
Datasheet PDF File MB3035S PDF File

MB3035S
MB3035S

Overview
www.
vishay.
com M(B,I)3035S, M(B,I)3045S Vishay General Semiconductor Schottky Barrier Rectifier TO-220AB TO-263AB K M30xxS 3 2 1 PIN 1 PIN 2 PIN 3 CASE TO-262AA K A NC MB30xxS NC K A HEATSINK MI30xxS PIN 1 3 2 1 PIN 2 PIN 3 K PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 30 A TJ max.
30 A 35 V, 45 V 200 A 0.
61 V 150 °C FEATURES • Guardring for overvoltage protection • Low power loss, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s per JESD22-B106 (for TO-220AB and TO-262AA package) • Material categorization: For definitions of compliance please see www.
vishay.
com/doc?99912 TYPICAL APPLICATIONS For use in low voltage, high frequency rectifier of switching mode power supplies, freewheeling diodes, DC/DC converters, and polarity protection application.
MECHANICAL DATA Case: TO-220AB, TO-263AB, and TO-262AA Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant, commercial grade Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix meets JESD 201 class 2 whisker test Polarity: As marked Mounting Torque: 10 in-lbs maximum MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Maximum repetitive peak reverse voltage Maximum average forward rectified current (Fig.
1) VRRM IF(AV) Peak forward surge current 10 ms single half sine-wave superimposed on rated load IFSM Peak repetitive reverse current at tp = 2.
0 µs, 1 kHz Voltage rate of change (rated VR) IRRM dV/dt Operating junction and storage temperature range TJ TSTG M(B,I)3035S M(B,I)3045S 35 45 30 200 2.
0 10 000 - 65 to + 150 - 65 to + 175 UNIT V A A V/μs °C Revision: 15-Oct-12 1 Document Number: 88952 For technical questions within your region: DiodesAmericas@vishay.
com, ...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)