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MBR20100CT-E3

Vishay
Part Number MBR20100CT-E3
Manufacturer Vishay
Description Dual Common-Cathode High Voltage Trench MOS Barrier Schottky Rectifier
Published Mar 27, 2016
Detailed Description MBR20xxxCT-E3, MBRF20xxxCT-E3, MBRB20xxxCT-E3 www.vishay.com Vishay General Semiconductor Dual Common-Cathode High Vo...
Datasheet PDF File MBR20100CT-E3 PDF File

MBR20100CT-E3
MBR20100CT-E3

Overview
MBR20xxxCT-E3, MBRF20xxxCT-E3, MBRB20xxxCT-E3 www.
vishay.
com Vishay General Semiconductor Dual Common-Cathode High Voltage Trench MOS Barrier Schottky Rectifier TO-220AB TMBS® ITO-220AB MBR2090CT MBR20100CT PIN 1 PIN 2 PIN 3 CASE 3 2 1 MBRF2090CT MBRF20100CT PIN 1 PIN 2 PIN 3 TO-263AB K 123 2 1 MBRB2090CT MBRB20100CT PIN 1 K PIN 2 HEATSINK PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF TJ max.
Package 2 x 10 A 90 V to 100 V 150 A 0.
65 V 150 °C TO-220AB, ITO-220AB, TO-263AB Diode variation Common cathode FEATURES • Trench MOS Schottky technology • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB and ITO-220AB package) • Material categorization: for definitions of compliance please see www.
vishay.
com/doc?99912 TYPICAL APPLICATIONS For use in high frequency rectifier of switching mode power supplies, freewheeling diodes, DC/DC converters or polarity protection application.
MECHANICAL DATA Case: TO-220AB, ITO-220AB, TO-263AB Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant, commercial grade Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test Polarity: As marked Mounting Torque: 10 in-lbs maximum    MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER Maximum repetitive peak reverse voltage Working peak reverse voltage Maximum DC blocking voltage total device Maximum average forward rectified current at TC = 133 °C per diode Peak forward surge current 8.
3 ms single half sine-wave superimposed on rated load per diode Non-repetitive avalanche energy at TJ = 25 °C, L = 60 mH per diode Peak repetitive reverse current at tp = 2 μs, 1 kHz, TJ = 38 °C ± 2 °C per diode Voltage rate of change (rated VR...


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