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MBRS16150

Taiwan Semiconductor
Part Number MBRS16150
Manufacturer Taiwan Semiconductor
Description Surface Mount Schottky Barrier Rectifiers
Published Mar 27, 2016
Detailed Description MBRS1635 thru MBRS16150 Taiwan Semiconductor CREAT BY ART Surface Mount Schottky Barrier Rectifiers FEATURES - Low power...
Datasheet PDF File MBRS16150 PDF File

MBRS16150
MBRS16150

Overview
MBRS1635 thru MBRS16150 Taiwan Semiconductor CREAT BY ART Surface Mount Schottky Barrier Rectifiers FEATURES - Low power loss, high efficiency - Ideal for automated placement - Guardring for overvoltage protection - High surge current capability - Moisture sensitivity level: level 1, per J-STD-020 - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 definition MECHANICAL DATA Case: TO-263AB (D2PAK) Molding compound, UL flammability classification rating 94V-0 Base P/N with suffix "G" on packing code - halogen-free Base P/N with prefix "H" on packing code - AEC-Q101 qualified Terminal: Matte tin plated leads, solderable per JESD22-B102 Meet JESD 201 class 1A whisker test with prefix "H" on packing code meet JESD 201 class 2 whisker test Polarity: As marked Weight: 1.
37 g (approximately) TO-263AB (D2PAK) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25℃ unless otherwise noted) PARAMETER MBRS MBRS MBRS MBRS MBRS MBRS MBRS SYMBOL 1635 1645 1650 1660 1690 16100 16150 Maximum repetitive peak reverse voltage VRRM 35 45 50 60 90 100 150 Maximum RMS voltage VRMS 24 31 35 42 63 70 105 Maximum DC blocking voltage VDC 35 45 50 60 90 100 150 Maximum average forward rectified current IF(AV) 16 Peak repetitive forward current (Rated VR, Square wave, 20KHz) IFRM 32 Unit V V V A A Peak forward surge current, 8.
3 ms single half sine-wave superimposed on rated load Peak repetitive reverse surge Current (Note 1) Maximum instantaneous forward voltage (Note 2) IF=16A, TJ=25℃ IF=16A, TJ=125℃ Maximum reverse current @ rated VR TJ=25 ℃ TJ=125 ℃ Typical thermal resistance Operating junction temperature range Storage temperature range Note 1: 2.
0μs Pulse Width, f=1.
0KHz Note 2: Pulse Test : 300μs Pulse Width, 1% Duty Cycle IFSM IRRM VF IR RθJC TJ TSTG 150 1 0.
5 0.
63 0.
75 0.
85 0.
57 0.
65 0.
82 0.
5 0.
3 15 10 7.
5 1.
5 - 55 to +150 - 55 to +175 A A 0.
95 0.
92 0.
1 5 V mA OC/W OC OC Document Number: DS_D...


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