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MBRS2035CT

Taiwan Semiconductor
Part Number MBRS2035CT
Manufacturer Taiwan Semiconductor
Description Dual Common Cathode Schottky Rectifier
Published Mar 27, 2016
Detailed Description MBRS2035CT thru MBRS20150CT Taiwan Semiconductor CREAT BY ART Dual Common Cathode Schottky Rectifier FEATURES - Low powe...
Datasheet PDF File MBRS2035CT PDF File

MBRS2035CT
MBRS2035CT

Overview
MBRS2035CT thru MBRS20150CT Taiwan Semiconductor CREAT BY ART Dual Common Cathode Schottky Rectifier FEATURES - Low power loss, high efficiency - Ideal for automated placement - Guardring for overvoltage protection - High surge current capability - Moisture sensitivity level: level 1, per J-STD-020 - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 definition MECHANICAL DATA Case: TO-263AB (D2PAK) Molding compound, UL flammability classification rating 94V-0 Base P/N with suffix "G" on packing code - halogen-free Base P/N with prefix "H" on packing code - AEC-Q101 qualified Terminal: Matte tin plated leads, solderable per JESD22-B102 Meet JESD 201 class 1A whisker test with prefix "H" on packing code meet JESD 201 class 2 whisker test Polarity: As marked Weight: 1.
37 g (approximately) TO-263AB (D2PAK) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25℃ unless otherwise noted) MBRS MBRS MBRS MBRS MBRS MBRS MBRS PARAMETER SYMBOL 2035 2045 2050 2060 2090 20100 20150 Maximum repetitive peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forward rectified current VRRM VRMS VDC IF(AV) CT CT CT CT CT CT CT 35 45 50 60 90 100 150 24 31 35 42 63 70 105 35 45 50 60 90 100 150 20 Peak repetitive forward current (Rated VR, Square wave, 20KHz) IFRM 20 Peak forward surge current, 8.
3 ms single half sine-wave superimposed on rated load IFSM 150 Peak repetitive reverse surge current (Note 1) Maximum instantaneous forward voltage (Note 2) IF=10A, TJ=25℃ IF=10A, TJ=125℃ IF=20A, TJ=25℃ IF=20A, TJ=125℃ Maximum reverse current @ rated VR TJ=25 ℃ TJ=125 ℃ Voltage rate of change (Rated VR) Typical thermal resistance Operating junction temperature range Storage temperature range Note 1: tp = 2.
0 μs, 1.
0KHz Note 2: Pulse test with PW=300μs, 1% duty cycle IRRM VF IR dV/dt RθJC TJ TSTG 1 0.
5 0.
65 0.
80 0.
85 0.
57 0.
70 0.
75 0.
84 0.
95 0.
95 0.
72 0.
85 0.
85 0.
1 15 10 5 ...


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