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MMBD3004

Taiwan Semiconductor
Part Number MMBD3004
Manufacturer Taiwan Semiconductor
Description SMD Switching Diode
Published Mar 27, 2016
Detailed Description Small Signal Product MMBD3004/CA/CC/SE Taiwan Semiconductor 350mW, SMD Switching Diode FEATURES - Fast switching speed...
Datasheet PDF File MMBD3004 PDF File

MMBD3004
MMBD3004

Overview
Small Signal Product MMBD3004/CA/CC/SE Taiwan Semiconductor 350mW, SMD Switching Diode FEATURES - Fast switching speed - Surface mount device type - Moisture sensitivity level 1 - Matte Tin (Sn) lead finish with Nickel (Ni) underplate - Pb free version and RoHS compliant - Packing code with suffix "G" means green compound (halogen-free) MECHANICAL DATA - Case: SOT-23 small outline plastic package - Terminal: Matte tin plated, lead free.
, solderable per MIL-STD-202, Method 208 guaranteed - High temperature soldering guaranteed : 260°C/10s - Weight: 8 ± 0.
5 mg SOT-23 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted) PARAMETER SYMBOL VALUE Power Dissipation Repetitive Peak Reverse Voltage Repetitive Peak Forward Current Mean Forward Current Non-Repetitive Peak Forward Surge Current Pulse Width=1μs Pulse Width=1s PD VRRM IFRM IO IFSM 350 350 625 225 4 1 Thermal Resistance (Junction to Ambient) Junction and Storage Temperature Range RθJA TJ , TSTG 357 -65 to +150 PARAMETER Reverse Breakdown Voltage IR=100μA Forward Voltage IF=100mA IF=200mA Reverse Leakage Current Junction Capacitance VR=240V VR=240V, VR=1V, TJ=150oC f=1.
0MHz Reverse Recovery Time IF=IR=30mA, RL=100Ω, IRR=0.
1IR SYMBOL V(BR) VF IR CJ trr MIN 350 - MAX - 1.
00 1.
25 0.
1 100 5 50 UNIT mW V mA mA A oC/W oC UNIT V V μA pF ns Document Number: DS_S1501010 Version: B15 Small Signal Product RATINGS AND CHARACTERISTICS CURVES (TA=25°C unless otherwise noted) Instantaneous Forward Current (mA) 1000 Fig.
1 Typical Forward Characteristics 100 10 1 0.
1 0.
01 0 0.
3 0.
6 0.
9 1.
2 1.
5 1.
8 Instantaneous Forward Voltage (V) 2.
1 Instantaneous Reverse Current (mA) MMBD3004/CA/CC/SE Taiwan Semiconductor 1000 100 10 1 0.
1 0.
01 0.
001 0 Fig.
2 Typical Reverse Characteristics 0.
5 1 1.
5 2 2.
5 3 Instantaneous Reverse Voltage (V) 3.
5 Power Dissipation (mW) 400 350 300 250 200 150 100 50 0 0 Fig.
3 Admissible Power Dissipation Curve 25 50 75 100 125 150 175 200...


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