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STPSC12H065

STMicroelectronics
Part Number STPSC12H065
Manufacturer STMicroelectronics
Description 650V power Schottky silicon carbide diode
Published Mar 27, 2016
Detailed Description STPSC12H065 650 V power Schottky silicon carbide diode $. . 72$& $ . Features • No or negligible reverse recove...
Datasheet PDF File STPSC12H065 PDF File

STPSC12H065
STPSC12H065

Overview
STPSC12H065 650 V power Schottky silicon carbide diode $.
.
72$& $ .
Features • No or negligible reverse recovery • Switching behavior independent of temperature • Dedicated to PFC applications • High forward surge capability Datasheet - production data Description The SiC diode is an ultrahigh performance power Schottky diode.
It is manufactured using a silicon carbide substrate.
The wide band gap material allows the design of a Schottky diode structure with a 650 V rating.
Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible.
The minimal capacitive turn-off behavior is independent of temperature.
Especially suited for use in PFC ...


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