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STPSC6TH13TI

STMicroelectronics
Part Number STPSC6TH13TI
Manufacturer STMicroelectronics
Description Dual 650V power Schottky silicon carbide diode
Published Mar 27, 2016
Detailed Description STPSC6TH13TI Dual 650 V power Schottky silicon carbide diode in series    ,QVXODWHG72$%  Features  No o...
Datasheet PDF File STPSC6TH13TI PDF File

STPSC6TH13TI
STPSC6TH13TI

Overview
STPSC6TH13TI Dual 650 V power Schottky silicon carbide diode in series    ,QVXODWHG72$%  Features  No or negligible reverse recovery  Switching behavior independent of temperature  Suited for specific bridge-less topologies  High forward surge capability  Insulated package: – Capacitance: 7 pF – Insulated voltage: 2500 V rms Datasheet - production data Description The SiC diode is an ultrahigh performance power Schottky diode.
It is manufactured using a silicon carbide substrate.
The wide band gap material allows the design of a Schottky diode structure with a 650 V rating.
Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negl...


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