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IRF7606PBF

International Rectifier
Part Number IRF7606PBF
Manufacturer International Rectifier
Description Power MOSFET
Published Mar 28, 2016
Detailed Description PD - 95245 IRF7606PbF l Generation V Technology l Ultra Low On-Resistance l P-Channel MOSFET l Very Small SOIC Package...
Datasheet PDF File IRF7606PBF PDF File

IRF7606PBF
IRF7606PBF

Overview
PD - 95245 IRF7606PbF l Generation V Technology l Ultra Low On-Resistance l P-Channel MOSFET l Very Small SOIC Package l Low Profile (<1.
1mm) l Available in Tape & Reel l Fast Switching l Lead-Free Description S S S G Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
HEXFET® Power MOSFET 1 8 A D 2 7D 3 6D 4 5D Top View VDSS = -30V RDS(on) = 0.
09Ω The new Micro8 package, with half the footprint area of the standard SO-8, provides the smallest footprint available in an SOIC outline.
This makes the Micro8 an ideal device for applications where printed circuit board space is at a premium.
The low profile (<1.
1mm) of the Micro8 will allow it to fit easily into extremely thin application environments such as portable electronics and PCMCIA cards.
Micro8 Absolute Maximum Ratings Parameter Max.
Units VDS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C Drain-Source Voltage Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V Pulsed Drain Current Maximum Power Dissipation„ Maximum Power Dissipation „ Linear Derating Factor -30 V -3.
6 -2.
9 A -29 1.
8 W 1.
1 W 14 mW/°C VGS VGSM dv/dt Gate-to-Source Voltage Gate-to-Source Voltage Single Pulse tp<10µS Peak Diode Recovery dv/dt ‚ ± 20 30 -5.
0 V V V/ns TJ , TSTG Junction and Storage Temperature Range Soldering Temperature, for 10 seconds -55 to + 150 240 (1.
6mm from case) °C Thermal Resistance Parameter Max.
Units RθJA Maximum Junction-to-Ambient „ 70 °C/W All Micro8 Data Sheets reflect improved Thermal Resistance, Power and Current -Handling Ratings- effective only for product marked with Date Code 505 or later .
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