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IRF7807VD1PBF-1

International Rectifier
Part Number IRF7807VD1PBF-1
Manufacturer International Rectifier
Description Power MOSFET
Published Mar 28, 2016
Detailed Description VDS RDS(on) max (@VGS = 4.5V) Qg (typical) QSW (typical) QOSS (typical) ID (@TA = 25°C) 30 V 25 mΩ 9.5 nC 3.4 nC 12 nC ...
Datasheet PDF File IRF7807VD1PBF-1 PDF File

IRF7807VD1PBF-1
IRF7807VD1PBF-1

Overview
VDS RDS(on) max (@VGS = 4.
5V) Qg (typical) QSW (typical) QOSS (typical) ID (@TA = 25°C) 30 V 25 mΩ 9.
5 nC 3.
4 nC 12 nC 8.
3 A IRF7807VD1PbF-1 FETKY™ MOSFET / SCHOTTKY DIODE SO-8 A/S 1 A/S 2 8 K/D 7 K/D A/S 3 6 K/D G4 5 K/D D Top View Applications l Co-Pack N-channel HEXFET® POWER MOSFET and Schottky Diode l Ideal for Synchronous Rectifiers in DC-DC Features Industry-standard pinout SO-8 Package Compatible with Existing Surface Mount Techniques RoHS Compliant, Halogen-Free MSL1, Industrial qualification Benefits ⇒ Multi-Vendor Compatibility Easier Manufacturing Environmentally Friendlier Increased Reliability Base Part Number Package Type IRF7807VD1PbF-1 SO-8 Standard Pack Form Quantity Tube/Bulk 95 Tape and Reel 4000 Orderable Part Number IRF7807VD1PbF-1 IRF7807VD1TRPbF-1 Absolute Maximum Ratings Parameter Drain-to-Source Voltage Gate-to-Source Voltage Continuous Output Current 25°C (VGS ≥ 4.
5V) ™Pulsed Drain Current 70°C Power Dissipation eÃÃÃÃÃÃÃÃÃÃÃÃ...


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