DatasheetsPDF.com

MS90N06

Bruckewell
Part Number MS90N06
Manufacturer Bruckewell
Description N-Channel 60-V (D-S) MOSFET
Published Mar 29, 2016
Detailed Description MS90N06 N-Channel 60-V (D-S) MOSFET Features • Low rDS(on) trench technology • Fast switching speed • Low thermal impeda...
Datasheet PDF File MS90N06 PDF File

MS90N06
MS90N06

Overview
MS90N06 N-Channel 60-V (D-S) MOSFET Features • Low rDS(on) trench technology • Fast switching speed • Low thermal impedance • RoHS compliant package Applications: • Power Routing • Li Ion Battery Packs • Level Shifting and Driver Circuits Packing & Order Information 3,000/Reel Graphic symbol Publication Order Number: [MS90N06] © Bruckewell Technology Corporation Rev.
A -2014 MS90N06 N-Channel 60-V (D-S) MOSFET MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings (TA=25°C unless otherwise specified) Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage ID Continuous Drain Currenta (TA=25°C) IDM Pulsed Drain Currenta IS Continuous Source Current (Diode Conduction)a PD Power Dissipationa (TA =25°C) TJ/TSTG Operating Junction and Storage Temperature Value 60 ±20 90 360 90 300 -55 to +175 Unit V V A A A W °C Thermal Resistance Ratings Symbol Parameter RθJA Maximum Junction-to-Ambienta RθJC Maximum Junction-to-Case Notes a.
Surface Mounted on 1” x 1” FR4 Board.
b.
Pulse width limited by maximum junction temperature Maximum 62.
5 1 Units °C/W Static Symbol VGS Parameter Gate Threshold Voltage Test Conditions VDS = VGS, ID =-250μA Min Typ.
Max.
Units 1V IGSS Gate-Body Leakage VDS = 0 V , VGS = ±20 V ±100 nA IDSS ID(on) Zero Gate Voltage Drain Current On-State Drain Current VDS = 48 V , VGS = 0 V VDS = 48 V , VGS = 0 V , TJ= 55°C VDS = 5 V, VGS = 10 V 120 1 uA 25 A RDS(on) gfs Drain-Source On-Resistance Forward Tranconductance VGS = 10 V, ID = 45 A VGS = 5.
5 V , ID = 44 A VDS = 15 V , ID = 20 A 3 mΩ 4 35 S VSD Diode Forward Voltage IS = 45 V , VGS = 0 V 0.
84 V Dynamicb Symbol Parameter td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Test Conditions VDS = 30 V , RL = 1.
5 Ω, VGEN = 10 V , RGEN = 6 Ω ID = 20 A Min Typ.
Max.
Units -- 64 -- ns -- 112 -- ns -- 276 -- ns -- 86 -- ns Publication Order Number: [MS90N06] © Bruckewell Technology Corporation Rev.
A -2014 MS90N0...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)