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MS67C10

Bruckewell
Part Number MS67C10
Manufacturer Bruckewell
Description N&P-Channel MOSFET
Published Mar 29, 2016
Detailed Description MS67C10 N & P Channel 60-V Dual MOSFETs Description These N+P dual Channel enhancement mode power field effect transisto...
Datasheet PDF File MS67C10 PDF File

MS67C10
MS67C10


Overview
MS67C10 N & P Channel 60-V Dual MOSFETs Description These N+P dual Channel enhancement mode power field effect transistors are using trench DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency fast switching applications.
Features • Fast switching • Green Device Available • Suit for 4.
5V Gate Drive Applications Applications • DC Fan • Motor Drive Applications • Networking • Half / Full Bridge Topology Packing & Order Information 3,000/Reel SO-8 Package information Graphic symbol Publication Order Number: [MS67C10] © Bruckewell Technology Corporation Rev.
A -2014 MS67C10 N & P Channel 60-V Dual MOSFETs MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings (TA=25°C unless otherwise specified) Symbol Parameter Rating VDS Drain-Source Voltage 60 -60 VGS Gate-Source Voltage ±20 ±20 ID Drain Current - Continuous (TC =25°C) Drain Current - Continuous (TC =70°C) IDM Drain Current - Pulsed1 4.
5 -3.
5 2.
85 -2.
21 18 -14 Power Dissipation (TC =25°C) PD Power Dissipation - Derate above 25°C 3.
57 0.
028 TJ TSTG Storage Temperature Range Operating Junction Temperature Range -55 to 150 -55 to 150 Unit V V A A A W W/°C °C °C Thermal Resistance Ratings Symbol Parameter RθJA Thermal Resistance Junction to ambient RθJC Thermal Resistance Junction to Case Typ.
Max.
-- 75 -- 35 Units °C/W N-CH Electrical Characteristics (TJ=25 °C, unless otherwise) Off Characteristics Symbol Parameter Test Conditions Min Typ.
Max.
Units BVDSS △BVDSS /△TJ Drain-Source Breakdown Voltage VGS = VGS, ID = 250uA BVDSS Temperature Coefficient Reference to 25°C , ID = 1mA 60 0.
05 V V/°C IGSS Gate-Source Leakage Current VDS = 0 V , VGS = ±20 V ±100 nA IDSS Drain-Source Leakage Current VDS = 60 V , VGS = 0 V , TJ=25°C VDS = 48 V , VGS = 0 V ,...


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