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TESDO5V0A

Taiwan Semiconductor
Part Number TESDO5V0A
Manufacturer Taiwan Semiconductor
Description Ultra Low Capacitance ESD Protection Array
Published Mar 30, 2016
Detailed Description Small Signal Product TESDO5V0A Taiwan Semiconductor Ultra Low Capacitance ESD Protection Array FEATURES - Meet IEC610...
Datasheet PDF File TESDO5V0A PDF File

TESDO5V0A
TESDO5V0A

Overview
Small Signal Product TESDO5V0A Taiwan Semiconductor Ultra Low Capacitance ESD Protection Array FEATURES - Meet IEC61000-4-2 (ESD) ±15kV (air), ±8kV (contact) - Meet IEC61000-4-4 (EFT) rating.
40A (5/50ns) - Meet IEC61000-4-5 (Lightning) rating.
5A (8/20μs) - Protects two directional I/O lines - Working voltage: 5V - Pb free version and RoHS compliant - Packing code with suffix "G" means green compound (halogen-free) MECHANICAL DATA - Case: MSOP-10 small outline plastic package - Terminal: Matte tin plated, lead free.
, solderable per MIL-STD-202, Method 208 guaranteed - High temperature soldering guaranteed : 260°C/10s - Weight: 12 ± 0.
5 mg - Marking code: R0544 MSOP-10 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted) PARAMETER SYMBOL VALUE Peak Pulse Power (tp=8/20μs waveform) Peak Pulse Current (tp=8/20μs) ESD per IEC 61000-4-2 (Air) ESD per IEC 61000-4-2 (Contact) PPP IPP VESD 125 5 ± 15 ±8 Junction and Storage Temperature Range TJ , TSTG -55 to +150 PARAMETER Reverse Stand-Off Voltage Reverse Breakdown Voltage IR = 1 mA Reverse Leakage Current VR = 5 V Clamping Voltage Junction Capacitance IPP = 1 A IPP = 5 A VR = 0 V , f = 1.
0 MHz SYMBOL VRWM V(BR) IR VC CJ MIN 6 - MAX 5 1 15 20 1 UNIT W A KV oC UNIT V V μA V pF Document Number: DS_S1501024 Version: B15 Small Signal Product RATINGS AND CHARACTERISTICS CURVES (TA=25°C unless otherwise noted) Fig.
1 Non-Repetitive Peak Pulse Power VS.
Pulse Time 10 Peak Pulse Power Ppp (KW) 1 0.
1 Power Rating (%) 0.
01 0.
1 1 10 Pulse Duration (μs) 100 1000 Fig.
3 Admissible Power Dissipation Curve 150 125 100 75 50 25 0 0 20 40 60 80 100 120 140 160 180 Ambient Temperature(oC) Clamping Voltage (V) Fig.
5 Clamping Voltage VS.
Peak Pulse Current 20 16 12 8 Waveform parameters: tr = 8 μs , td = 20 μs 4 0 0 1234 Peak Pulse Current (A) 5 Document Number: DS_S1501024 Percent of IPP Normalized Capacitance (pF) TESDO5V0A Taiwan Semiconductor 110 100 90...


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