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CGHV59350

Cree
Part Number CGHV59350
Manufacturer Cree
Description GaN HEMT
Published Mar 31, 2016
Detailed Description PRELIMINARY CGHV59350 350 W, 5200 - 5900 MHz, 50-Ohm Input/Output Matched, GaN HEMT for C-Band Radar Systems Cree’s CGHV...
Datasheet PDF File CGHV59350 PDF File

CGHV59350
CGHV59350

Overview
PRELIMINARY CGHV59350 350 W, 5200 - 5900 MHz, 50-Ohm Input/Output Matched, GaN HEMT for C-Band Radar Systems Cree’s CGHV59350 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV59350 ideal for 5.
2 - 5.
9 GHz C-Band radar amplifier applications.
The transistor is supplied in a ceramic/metal flange package, type 440217 and 440218.
Package Type: PN: 440217 CGHV59350 and 440218 Typical Performance Over 5.
2 - 5.
9 GHz (TC = 25˚C) of Demonstration Amplifier Parameter 5.
2 GHz 5.
55 GHz 5.
9 GHz Output Power 440 445 490 Gain 10.
5 10.
5 11 Drain Efficiency 59 54 Note: Measured in the CGHV59350-TB under 100 μs pulse width, 10% duty cycle, PIN = 46 dBm 55 Units W dB % Rev 0.
0 - May 2015 - PRELIMINARY Features • 5.
2 - 5.
9 GHz Operation • 450 W Typical Output Power • 10.
5 dB Power Gain • 55% Typical Drain Efficiency • 50 Ohm Internally Matched • <0.
3 dB Pulsed Amplitude Droop Subject to change without notice.
www.
cree.
com/rf 1 Absolute Maximum Ratings (not simultaneous) Parameter Symbol Rating Units Conditions Pulse Width PW 100 µs Duty Cycle DC 10 % Drain-Source Voltage Gate-to-Source Voltage Storage Temperature Operating Junction Temperature Maximum Forward Gate Current Maximum Drain Current1 Soldering Temperature2 Screw Torque VDSS VGS TSTG TJ IGMAX IDMAX TS τ 125 -10, +2 -65, +150 225 64 24 245 40 Volts Volts ˚C ˚C mA A ˚C in-oz 25˚C 25˚C 25˚C 25˚C Pulsed Thermal Resistance, Junction to Case RθJC 0.
31 ˚C/W 100 μsec, 10%, 85˚C , PDISS = 320 W Case Operating Temperature TC -40, +85 ˚C Notes: 1 Current limit for long term, reliable operation 2 Refer to the Application Note on soldering at http://www.
cree.
com/rf/tools-and-support/document-library Electrical Characteristics Characteristics DC Characteristics1 (TC = 25˚C) Gate Threshold Voltage Symbol VGS(th) Gate Quiescent Voltage VGS(Q) Saturated Drain C...


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