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MJE801


Part Number MJE801
Manufacturer Central Semiconductor
Title Transistor
Description The CENTRAL SEMICONDUCTOR MJE700, MJE800 series devices are medium power complementary silicon Darlington transistors designed for audio amplifie...
Features JE700,701,800,801) 60 VCE(SAT) IC=1.5A, IB=30mA (MJE700,702,800,802) VCE(SAT) IC=2.0A, IB=40mA (MJE701,703,801,803) VCE(SAT) IC=4.0A, IB=40mA VBE(ON) VCE=3.0V, IC=1.5A (MJE700,702,800,802) VBE(ON) VCE=3.0V, IC=2.0A (MJE701,703,801,803) VBE(ON) VCE=3.0V, IC=4.0A hFE VCE=3.0V, IC=1.5A (MJE7...

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MJE800 : MJE800/801/802/803 MJE800/801/802/803 Monolithic Construction With Built-in BaseEmitter Resistors • High DC Current Gain : hFE= 750 (Min.) @ IC= 1.5 and 2.0A DC • Complement to MJE700/701/702/703 1 TO-126 2.Collector 3.Base 1. Emitter NPN Epitaxial Silicon Darlington Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC IB PC TJ TSTG Parameter Collector- Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature : MJE800/801 : MJE802/803 : MJE800/801 : MJE802/803 Value 60 80 60 80 5 4 0.1 40 150 - 55 ~ 150 Units V V V V V A A W °C °C R1 R2 E B Eq.

MJE800 : MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJE700/D PNP Plastic Darlington Complementary Silicon Power Transistors designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain — hFE = 2000 (Typ) @ IC = 2.0 Adc • Monolithic Construction with Built–in Base–Emitter Resistors to Limit Leakage Multiplication • Choice of Packages — MJE700 and MJE800 series T0220AB, MJE700T and MJE800T MAXIMUM RATINGS MJE700,T MJE702 MJE703 NPN MJE800,T MJE802 MJE803 4.0 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 40 WATT 50 WATT ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ .

MJE800 : www.DataSheet4U.com MJE700, MJE702, MJE703 (PNP) − MJE800, MJE802, MJE803 (NPN) Plastic Darlington Complementary Silicon Power Transistors These devices are designed for general−purpose amplifier and low−speed switching applications. Features http://onsemi.com • High DC Current Gain − hFE = 2000 (Typ) @ IC • • • = 2.0 Adc Monolithic Construction with Built−in Base−Emitter Resistors to Limit Leakage − Multiplication Choice of Packages − MJE700 and MJE800 Series Pb−Free Packages are Available* 4.0 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 40 WATT 50 WATT ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ.

MJE800 : ·Collector–Emitter Breakdown Voltage— : V(BR)CEO = 60 V ·DC Current Gain— : hFE = 750(Min) @ IC= 1.5 A = 100(Min) @ IC= 4A ·Complement to Type MJE700 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general-purpose amplifier and low-speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 4 A IB Base Current PC Collector Power Dissipation TC=25℃ Ti Junction Temperature 0.1 A 40 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMA.

MJE800 : ·With TO-126 package www.datasheet4u.com ·Complement to type MJE700/701/702/703 ·High DC current gain ·DARLINGTON APPLICATIONS ·Designed for general–purpose amplifier and low–speed switching applications PINNING (see Fig.2) PIN 1 2 3 Emitter Collector;connected to mounting base Base DESCRIPTION MJE800/801/802/803 ABSOLUTE MAXIMUM RATINGS(TC=25 ) SYMBOL PARAMETER MJE800/801 VCBO Collector-base voltage MJE802/803 MJE800/801 VCEO Collector-emitter voltage MJE802/803 VEBO IC IB PC Tj Tstg Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25 Open collector Open base 80 5 4 0.1 40 150 -55~150 V A A W Open emitter 80 60 V C.

MJE800 : The CENTRAL SEMICONDUCTOR MJE700, MJE800 series devices are medium power complementary silicon Darlington transistors designed for audio amplifier applications as complementary output devices. MARKING: FULL PART NUMBER TO-126 CASE MAXIMUM RATINGS: (TC=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Continuous Base Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCEO VEBO IC IB PD TJ, Tstg ΘJC MJE700 MJE701 MJE800 MJE801 60 MJE702 MJE703 MJE802 MJE803 80 60 80 5.0 4.0 100 40 -65 to +150 3.13 ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted) SYMBOL TEST CONDIT.

MJE800G : MJE700G, MJE702G, MJE703G (PNP), MJE800G, MJE802G, MJE803G (NPN) Plastic Darlington Complementary Silicon Power Transistors These devices are designed for general−purpose amplifier and low−speed switching applications. Features • High DC Current Gain − hFE = 2000 (Typ) @ IC = 2.0 Adc • Monolithic Construction with Built−in Base−Emitter Resistors to Limit Leakage − Multiplication • Choice of Packages − MJE700 and MJE800 Series • These Devices are Pb−Free and are RoHS Compliant* MAXIMUM RATINGS Rating Symbol Value Unit Collector−Emitter Voltage MJE700G, MJE800G MJE702G, MJE703G, MJE802G, MJE803G VCEO 60 80 Vdc Collector−Base Voltage MJE700G, MJE800G MJE702G, MJE703G, MJE802G, MJE803G.

MJE800T : ·Collector–Emitter Breakdown Voltage— : V(BR)CEO = 60 V ·DC Current Gain— : hFE = 750(Min) @ IC= 1.5A = 100(Min) @ IC= 4A ·Complement to Type MJE700T ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general-purpose amplifier and low-speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 4 A IB Base Current PC Collector Power Dissipation TC=25℃ Ti Junction Temperature 0.1 A 50 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMA.

MJE800T : The CENTRAL SEMICONDUCTOR MJE700T, MJE800T series devices are medium power complementary silicon Darlington transistors designed for audio amplifier applications as complementary output devices. MARKING: FULL PART NUMBER TO-220 CASE MAXIMUM RATINGS: (TC=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Continuous Base Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCEO VEBO IC IB PD TJ, Tstg ΘJC MJE700T MJE701T MJE800T MJE801T 60 MJE702T MJE703T MJE802T MJE803T 80 60 80 5.0 4.0 100 50 -65 to +150 2.5 ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted) SYMBOL T.

MJE800T : MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJE700/D PNP Plastic Darlington Complementary Silicon Power Transistors designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain — hFE = 2000 (Typ) @ IC = 2.0 Adc • Monolithic Construction with Built–in Base–Emitter Resistors to Limit Leakage Multiplication • Choice of Packages — MJE700 and MJE800 series T0220AB, MJE700T and MJE800T MAXIMUM RATINGS MJE700,T MJE702 MJE703 NPN MJE800,T MJE802 MJE803 4.0 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 40 WATT 50 WATT ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ .

MJE801 : MJE800/801/802/803 MJE800/801/802/803 Monolithic Construction With Built-in BaseEmitter Resistors • High DC Current Gain : hFE= 750 (Min.) @ IC= 1.5 and 2.0A DC • Complement to MJE700/701/702/703 1 TO-126 2.Collector 3.Base 1. Emitter NPN Epitaxial Silicon Darlington Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC IB PC TJ TSTG Parameter Collector- Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature : MJE800/801 : MJE802/803 : MJE800/801 : MJE802/803 Value 60 80 60 80 5 4 0.1 40 150 - 55 ~ 150 Units V V V V V A A W °C °C R1 R2 E B Eq.

MJE801 : ·Collector–Emitter Breakdown Voltage— : V(BR)CEO = 60 V ·DC Current Gain— : hFE = 750(Min) @ IC= 2A = 100(Min) @ IC= 4A ·Complement to Type MJE701 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general-purpose amplifier and low-speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 4 A IB Base Current PC Collector Power Dissipation TC=25℃ Ti Junction Temperature 0.1 A 40 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL C.

MJE801 : ·With TO-126 package www.datasheet4u.com ·Complement to type MJE700/701/702/703 ·High DC current gain ·DARLINGTON APPLICATIONS ·Designed for general–purpose amplifier and low–speed switching applications PINNING (see Fig.2) PIN 1 2 3 Emitter Collector;connected to mounting base Base DESCRIPTION MJE800/801/802/803 ABSOLUTE MAXIMUM RATINGS(TC=25 ) SYMBOL PARAMETER MJE800/801 VCBO Collector-base voltage MJE802/803 MJE800/801 VCEO Collector-emitter voltage MJE802/803 VEBO IC IB PC Tj Tstg Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25 Open collector Open base 80 5 4 0.1 40 150 -55~150 V A A W Open emitter 80 60 V C.

MJE801T : The CENTRAL SEMICONDUCTOR MJE700T, MJE800T series devices are medium power complementary silicon Darlington transistors designed for audio amplifier applications as complementary output devices. MARKING: FULL PART NUMBER TO-220 CASE MAXIMUM RATINGS: (TC=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Continuous Base Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCEO VEBO IC IB PD TJ, Tstg ΘJC MJE700T MJE701T MJE800T MJE801T 60 MJE702T MJE703T MJE802T MJE803T 80 60 80 5.0 4.0 100 50 -65 to +150 2.5 ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted) SYMBOL T.

MJE801T : ·Collector–Emitter Breakdown Voltage— : V(BR)CEO = 60 V ·DC Current Gain— : hFE = 750(Min) @ IC= 2A = 100(Min) @ IC= 4A ·Complement to Type MJE701T ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general-purpose amplifier and low-speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 4 A IB Base Current PC Collector Power Dissipation TC=25℃ Ti Junction Temperature 0.1 A 50 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL .

MJE802 : leteThe device is manufactured in planar technology owith “base island” layout and monolithic sDarlington configuration. 1 2 3 SOT-32 Figure 1. Internal schematic diagram duct(s) - Ob R1 typ. = 15 kΩ Obsolete Pro R2 typ. = 100 Ω Table 1. Device summary Order code MJE802 Marking MJE802 Package SOT-32 August 2009 Doc ID 4958 Rev 4 Packaging Tube 1/8 www.st.com 8 Absolute maximum ratings 1 Absolute maximum ratings MJE802 Table 2. Absolute maximum ratings Symbol Parameter Value Unit VCBO VCEO Collector-base voltage (IE = 0) Collector-emitter voltage (IB = 0) 80 V VEBO Emitter-base voltage (IC = 0) 5V IC Collector current 4A ICM )IB t(sPTOT ucTSTG Obsolete Product(s) - Ob.




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