DatasheetsPDF.com

ACE2370M

ACE Technology
Part Number ACE2370M
Manufacturer ACE Technology
Description N-Channel MOSFET
Published Apr 1, 2016
Detailed Description ACE2370M N-Channel 100-V MOSFET Description ACE2370M uses advanced trench technology to provide excellent RDS(ON). This...
Datasheet PDF File ACE2370M PDF File

ACE2370M
ACE2370M


Overview
ACE2370M N-Channel 100-V MOSFET Description ACE2370M uses advanced trench technology to provide excellent RDS(ON).
This device particularly suits for low voltage application such as power management of desktop computer or notebook computer power management, DC/DC converter.
Features • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed Applications: • PoE Power Sourcing Equipment • PoE Powered Devices • Telecom DC/DC converters • White LED boost converters Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Currenta Pulsed Drain Current b TA=25°C TA=70°C Continuous Source Current (Diode Conduction) a Power Dissipationa TA=25°C TA=70°C Operating Junction and Storage Temperature Range Symbol VDS VGS ID IDM IS PD TJ, Tstg Limit 100 ±20 1.
5 1.
2 10 1.
6 1.
3 0.
8 -55 to 150 Unit V A A W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambient a t<=10sec Steady State Symbol Maximum Unit RθJA 100 °C/W 166 Notes a.
Surface Mounted on 1” x 1” FR4 Board.
b.
Pulse width limited by maximum junction temperature VER 1.
1 1 Packaging Type Ordering information ACE2370M BM + H Halogen - free Pb - free BM : SOT-23-3 ACE2370M N-Channel 100-V MOSFET VER 1.
1 2 Electrical Characteristics TA=25℃, unless otherwise specified.
ACE2370M N-Channel 100-V MOSFET Parameter Gate-Source Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current Drain-Source On-Resistance Forward Transconductance Diode Forward Voltage Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance ReverseTransfer Capacitance Gate Resistance Symbol VGS (th) IGSS IDSS ID(on) rDS(on) gfs VSD Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Conditions Static VDS = VGS, ID = 250 uA VDS = 0 V, VGS = 20 V VDS = 80 V, VGS = 0 V VDS = 80V, VGS = 0 V, TJ = 55°C VDS = 5 V, VGS = 10 V VGS = 10 V, ID = 1.
2 A...



Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)