DatasheetsPDF.com

ACE2390M

ACE Technology
Part Number ACE2390M
Manufacturer ACE Technology
Description N-Channel MOSFET
Published Apr 1, 2016
Detailed Description ACE2390M N-Channel 150-V MOSFET Description ACE2390M uses advanced trench technology to provide excellent RDS(ON). This...
Datasheet PDF File ACE2390M PDF File

ACE2390M
ACE2390M

Overview
ACE2390M N-Channel 150-V MOSFET Description ACE2390M uses advanced trench technology to provide excellent RDS(ON).
This device particularly suits for low voltage application such as power management of desktop computer or notebook computer power management, DC/DC converter.
Features • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed Applications: • PoE Power Sourcing Equipment • PoE Powered Devices • Telecom DC/DC converters • White LED boost converters Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Currenta Pulsed Drain Current b TA=25°C TA=70°C Continuous Source Current (Diode Conduction) a Power Dissipationa TA=25°C TA=70°C Operating Junction and Storage Temperature Range Symbol VDS VGS ID IDM IS PD TJ, Tstg Limit 150 ±20 1.
1 0.
9 5 1.
6 1.
3 0.
8 -55 to 150 Unit V A A W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambient a t<=10sec Steady State Symbol Maximum Unit RθJA 100 °C/W 166 Notes a.
Surface Mounted on 1” x 1” FR4 Board.
b.
Pulse width limited by maximum junction temperature VER 1.
1 1 Packaging Type ACE2390M N-Channel 150-V MOSFET Ordering information ACE2390M BM + H Halogen - free Pb - free BM : SOT-23-3 VER 1.
1 2 Electrical Characteristics TA=25℃, unless otherwise specified.
Parameter Gate-Source Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current Drain-Source On-Resistance Forward Transconductance Diode Forward Voltage Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance ReverseTransfer Capacitance ACE2390M N-Channel 150-V MOSFET Symbol VGS (th) IGSS IDSS ID(on) rDS(on) gfs VSD Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Conditions Static VDS = VGS, ID = 250 uA VDS = 0 V, VGS = ±20 V VDS = 120 V, VGS = 0 V VDS = 120V, VGS = 0 V, TJ = 55°C VDS = 5 V, VGS = 10 V VGS = 10 V, ID = 1.
1 A VGS = 4.
5 V, ID ...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)