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NE55410GR

Renesas
Part Number NE55410GR
Manufacturer Renesas
Description N-CHANNEL SILICON POWER LDMOS FET
Published Apr 1, 2016
Detailed Description DATA SHEET LDMOS FIELD EFFECT TRANSISTOR NE55410GR N-CHANNEL SILICON POWER LDMOS FET FOR 2 W + 10 W VHF to L-BAND SINGLE...
Datasheet PDF File NE55410GR PDF File

NE55410GR
NE55410GR

Overview
DATA SHEET LDMOS FIELD EFFECT TRANSISTOR NE55410GR N-CHANNEL SILICON POWER LDMOS FET FOR 2 W + 10 W VHF to L-BAND SINGLE-END POWER AMPLIFIER DESCRIPTION The NE55410GR is an N-channel enhancement-mode LDMOS FET designed for driver 0.
1 to 2.
6 GHz PA, such as, cellular base station amplifier, analog/digital TV-transmitters, and the other PA’s.
This product has two different FET's on one die manufactured using our NEWMOS technology (our WSi gate lateral MOS FET), and its nitride surface passivation and quadruple layer aluminum silicon metalization offer a high degree of reliability.
FEATURES • Two different FET’s (Q1 : Pout = 2 W, Q2 : Pout = 10 W) in one package • Over 25 dB gain avail...


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