DatasheetsPDF.com

UPD5742T6J

Part Number	UPD5742T6J
Manufacturer	Renesas
Description	LOW NOISE AND HIGH GAIN AMPLIFIER
Published	Apr 1, 2016
Detailed Description	DATA SHEET MOS ANALOG INTEGRATED CIRCUIT μPD5742T6J LOW NOISE AND HIGH GAIN AMPLIFIER FOR IMPEDANCE CONVERTER OF MICROPH...
Datasheet	UPD5742T6J PDF File

Overview

DATA SHEET MOS ANALOG INTEGRATED CIRCUIT μPD5742T6J LOW NOISE AND HIGH GAIN AMPLIFIER FOR IMPEDANCE CONVERTER OF MICROPHONE DESCRIPTION The μPD5742T6J is a silicon MOS monolithic integrated circuit designed as high gain impedance converter for electret condenser microphone.
This device exhibits low noise and high voltage gain characteristics.
The package is 3-pin thin-type lead-less minimold, suitable for surface mount.
FEATURES • Low Noise : NV = −98 dBV TYP.
@ VDD = 2 V, Cin = 3 pF, RL = 2.
2 kΩ : NV = −99 dBV TYP.
@ VDD = 2 V, Cin = 5 pF, RL = 2.
2 kΩ • High Gain : GV = +9.
0 dB TYP.
@ VDD = 2 V, Cin = 3 pF, RL = 2.
2 kΩ : GV = +11.
0 dB TYP.
@ VDD = 2 V, Cin = 5 pF, RL = 2.
2 kΩ • Low...

Similar Datasheet

UPD5742T6J LOW NOISE AND HIGH GAIN AMPLIFIER - Renesas

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)