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SZM-2166Z

RF Micro Devices
Part Number SZM-2166Z
Manufacturer RF Micro Devices
Description 2W POWER AMPLIFIER
Published Apr 1, 2016
Detailed Description SZM-2166Z 2.3GHz to 2.7GHz 2W Power Ampli- SZM-2166Zfier 2.3GHz to 2.7GHz 2W POWER AMPLIFIER Package: QFN, 6mmx6mm Prod...
Datasheet PDF File SZM-2166Z PDF File

SZM-2166Z
SZM-2166Z

Overview
SZM-2166Z 2.
3GHz to 2.
7GHz 2W Power Ampli- SZM-2166Zfier 2.
3GHz to 2.
7GHz 2W POWER AMPLIFIER Package: QFN, 6mmx6mm Product Description RFMD’s SZM-2166Z is a high linearity class AB Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost surface-mountable plastic Q-FlexN multi-chip module package.
This HBT amplifier is made with InGaP on GaAs device technology and fabricated with MOCVD for an ideal combination of low cost and high reliability.
This product is specifically designed for 802.
16 customer premises equipment (CPE) terminals in the 2.
3GHz to 2.
7GHz bands.
It can run from a 3V to 6V supply.
The external output match and bias adjustability allows load line optimization...


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