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SPA2118Z

RF Micro Devices
Part Number SPA2118Z
Manufacturer RF Micro Devices
Description POWER AMPLIFIER
Published Apr 1, 2016
Detailed Description SPA2118Z 850MHz 1 Watt Power Amplifier with Active Bias SPA2118Z 850MHz 1 WATT POWER AMPLIFIER WITH ACTIVE BIAS Packa...
Datasheet PDF File SPA2118Z PDF File

SPA2118Z
SPA2118Z


Overview
SPA2118Z 850MHz 1 Watt Power Amplifier with Active Bias SPA2118Z 850MHz 1 WATT POWER AMPLIFIER WITH ACTIVE BIAS Package: Exposed Pad SOIC-8 Product Description RFMD’s SPA2118Z is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost surface-mountable plastic package.
These HBT amplifiers are fabricated using molecular beam epitaxial growth technology which produces reliable and consistent performance from wafer to wafer and lot to lot.
This product is specifically designed for use as a driver amplifier for infrastructure equipment in the 850MHz band.
Its high linearity makes it an ideal choice for multi-carrier and digital applications.
Optimum Technology Matching® Applied  GaAs HBT GaAs MESFET InGaP HBT SiGe BiCMOS Si BiCMOS SiGe HBT GaAs pHEMT Si CMOS Si BJT GaN HEMT RF MEMS VC1 VBIAS RFIN VPC2 Active Bias RFOUT/ VC2 Features  High Linearity Performance  +20.
7dBm, IS-95 CDMA Channel Power at -55dBc ACP  +47dBm Typ.
OIP3  High Gain: 33dB Typ.
 On-Chip Active Bias Control  Patented high Reliability GaAs HBT Technology  Surface-Mountable Plastic Package Applications  IS-95 CDMA Systems  Multi-Carrier Applications  AMPS, ISM Applications Parameter Frequency of Operation Output Power at 1dB Compression Adjacent Channel Power Min.
810 Specification Typ.
900 29.
0 -55.
0 Small Signal Gain 31.
5 Input VSWR Output Third Order Intercept Point Noise Figure Device Current 360 Device Voltage Thermal Resistance (Junction - Lead) Test Conditions: Z0=50 4.
75 Temp=25°C VCC=5.
0V 33.
0 1.
5:1 47.
0 5.
0 400 5.
0 31 Max.
960 -52.
0 34.
5 425 5.
25 Unit MHz dBm dBc dB dBm dB mA V °C/W Condition IS-95 at 880MHz, ±885KHz offset, POUT = 20.
7 dBm 880 MHz Power out per tone=+14dBm IBIAS=10mA, IC1=70mA, IC2=320mA TL = 85°C DS121024 RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC.
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