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SPA2318Z

RF Micro Devices
Part Number SPA2318Z
Manufacturer RF Micro Devices
Description POWER AMPLIFIER
Published Apr 1, 2016
Detailed Description SPA2318ZLow Noise, High Gain SiGe HBT SPA2318Z 1700MHz to 2200MHz 1 WATT POWER AMP WITH ACTIVE BIAS Package: Exposed ...
Datasheet PDF File SPA2318Z PDF File

SPA2318Z
SPA2318Z

Overview
SPA2318ZLow Noise, High Gain SiGe HBT SPA2318Z 1700MHz to 2200MHz 1 WATT POWER AMP WITH ACTIVE BIAS Package: Exposed Pad SOIC-8 Product Description RFMD’s SPA2318Z is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost surface-mountable plastic package.
These HBT amplifiers are fabricated using molecular beam epitaxial growth technology which produces reliable and consistent performance from wafer to wafer and lot to lot.
This product is specifically designed for use as a driver amplifier for infrastructure equipment in the 1960MHz and 2140MHz bands.
Its high linearity makes it an ideal choice for multi-carrier and digital applications.
The matte tin finish on the lead-free package utilizes a post annealing process to mitigate tin whisker forma- Optimum Technology Matching® Applied  GaAs HBT tion and is RoHS compliant per EU Directive 2002/95.
This package is also manufactured with green molding compounds that contain no antimony trioxide or halogenated fire retardants.
GaAs MESFET InGaP HBT SiGe BiCMOS VC1 Si BiCMOS SiGe HBT GaAs pHEMT Si CMOS VBIAS RFIN Active Bias RFOUT/ VC2 Si BJT GaN HEMT RF MEMS VPC2 Features  High Linearity Performance: +21dBm IS-95 Channel Power at -55dBc ACP; +20.
7dBm WCDMA Channel Power at -50dBc ACP; +47dBm Typ.
OIP3  On-Chip Active Bias Control  High Gain: 24dB Typ.
at 1960 MHz  Patented High Reliability GaAs HBT Technology  Surface-Mountable Plastic Package Applications  WCDMA Systems  PCS Systems  Multi-Carrier Applications Parameter Specification Min.
Typ.
Max.
Unit Condition Frequency of Operation 1700 2200 MHz Output Power at 1dB Compression [1] 29.
5 dBm 1960 MHz 29.
5 dBm 2140 MHz Adjacent Channel Power [1] -55.
0 -50.
0 -47.
0 dBc 1960MHz, IS-95 at POUT=21.
0dBm, WCDMA at POUT = 20.
7 dBm dBc 2140MHz Small Signal Gain [1,2] 24.
0 dB 1960MHz 21.
0 23.
5 24.
5 dB 2140MHz Input VSWR [1,2] 1.
6:1 1960 MHz 1.
6:1 2140 MHz Output Third Order I...


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