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RJF0410JPE

Renesas
Part Number RJF0410JPE
Manufacturer Renesas
Description Silicon N-Channel FET
Published Apr 2, 2016
Detailed Description RJF0410JPE 40V - 40A - N Channel Thermal FET Power Switching Data Sheet R07DS1237EJ0200 Rev.2.00 Jan 29, 2015 Descript...
Datasheet PDF File RJF0410JPE PDF File

RJF0410JPE
RJF0410JPE


Overview
RJF0410JPE 40V - 40A - N Channel Thermal FET Power Switching Data Sheet R07DS1237EJ0200 Rev.
2.
00 Jan 29, 2015 Description This FET has the over temperature shut-down capability sensing to the junction temperature.
This FET has the built-in over temperature shut-down circuit in the gate area.
And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying over power consumption, over current etc.
.
Features • Logic level operation.
• Built-in the over temperature shut-down circuit.
• High endurance capability against to the short circuit.
• Latch type shut down operation (need 0 voltage recovery).
• Built-in the current limitation circuit.
• Power supply voltage applies 12 V.
• AEC-Q101 Compliant Outline RENESAS Package code: PRSS0004AE-B (Package name: LDPAK (S)-(1) ) 4 123 G Gate Resistor Current Limitation Circuit Temperature Sensing Circuit Latch Circuit Gate Shut-down Circuit D 1.
Gate 2.
Drain 3.
Source 4.
Drain S Absolute Maximum Ratings Item Symbol Drain to source voltage VDSS Gate to source voltage VGSS Gate to source voltage Drain current VGSS ID Note3 Body-drain diode reverse drain current IDR Avalanche current Avalanche energy IAP Note 2 EAR Note 2 Channel dissipation Pch Note 1 Channel temperature Tch Storage temperature Tstg Notes: 1.
Value at Tc = 25°C 2.
Tch = 25°C, Rg ≥ 50 Ω 3.
It provides by the current limitation lower bound value.
Ratings 40 16 –2.
5 40 40 12 960 100 150 –55 to +150 (Ta = 25°C) Unit V V V A A A mJ W °C °C R07DS1237EJ0200 Rev.
2.
00 Jan 29, 2015 Page 1 of 7 RJF0410JPE Typical Operation Characteristics Item Input voltage Input current (Gate non shut down) Input current (Gate shut down) Shut down temperature Gate operation voltage Drain current (Current limitation value) Notes: 4.
Pulse test Symbol VIH VIL IIH1 IIH2 IIL IIH(sd)1 IIH(sd)2 Tsd Vop ID limt Min 3.
5 — — — — — — — 3.
5 40 Typ Max —— — 1.
2 — 100 — 50 —1 0.
8 — 0.
35 — 175 — — 12 —— Unit V V ...



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