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RJF0605DPD

Part Number	RJF0605DPD
Manufacturer	Renesas
Description	N-Channel MOSFET
Published	Apr 2, 2016
Detailed Description	Target Specifications Datasheet RJF0605DPD Silicon N Channel MOS FET Series Power Switching R07DS0714EJ0100 Rev.1.00 A...
Datasheet	RJF0605DPD PDF File

Overview

Target Specifications Datasheet RJF0605DPD Silicon N Channel MOS FET Series Power Switching R07DS0714EJ0100 Rev.
1.
00 Apr 17, 2012 Description This FET has the over temperature shut-down capability sensing to the junction temperature.
This FET has the built-in over temperature shut-down circuit in the gate area.
And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying over power consumption, over current etc.
.
Features  Logic level operation (4 V Gate drive).
 Built-in the over temperature shut-down circuit.
 High endurance capability against to the short circuit.
 Latch type shut down operation (need 0 voltage recovery).
 Built-in the current limitation circuit.
 Power supply voltage applies 12 V and 24 V.
 For Industrial applications Outline RENESAS Package code: PRSS0004ZD-C (Package name: DPAK (S) ) 4 1 2 3 G Gate Resistor Temperature Sensing Circuit Latch Circuit Current Limitation Circuit Gate Shut-down Circuit ...

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RJF0605DPD N-Channel MOSFET - Renesas

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