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RJF0611DPD

Renesas
Part Number RJF0611DPD
Manufacturer Renesas
Description N-Channel MOSFET
Published Apr 2, 2016
Detailed Description Target Specifications Datasheet RJF0611DPD Silicon N Channel MOS FET Series Power Switching R07DS0716EJ0100 Rev.1.00 A...
Datasheet PDF File RJF0611DPD PDF File

RJF0611DPD
RJF0611DPD

Overview
Target Specifications Datasheet RJF0611DPD Silicon N Channel MOS FET Series Power Switching R07DS0716EJ0100 Rev.
1.
00 Apr 17, 2012 Description This FET has the over temperature shut-down capability sensing to the junction temperature.
This FET has the built-in over temperature shut-down circuit in the gate area.
And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying over power consumption, over current etc.
.
Features  Logic level operation (4 V Gate drive).
 Built-in the over temperature shut-down circuit.
 High endurance capability against to the short circuit.
 Latch type shut down operation (need 0 voltage recovery).
 Built-in the current limitation circuit.
 Power supply voltage applies 12 V and 24 V.
 For Industrial applications Outline RENESAS Package code: PRSS0004ZD-C (Package name: DPAK (S) ) 4 1 2 3 G Gate Resistor Temperature Sensing Circuit Latch Circuit Current Limitation Circuit Gate Shut-down Circuit D 1.
Gate 2.
Drain 3.
Source 4.
Drain S Absolute Maximum Ratings Item Symbol Drain to source voltage VDSS Gate to source voltage VGSS Gate to source voltage Drain current VGSS ID Note3 Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation IDR IAP Note 2 EAR Note 2 Pch Note 1 Channel temperature Tch Storage temperature Tstg Notes: 1.
Value at Tc = 25C 2.
Tch = 25C, Rg  50  3.
It provides by the current limitation lower bound value.
Ratings 60 16 –2.
5 30 30 6.
7 192 40 150 –55 to +150 (Ta = 25°C) Unit V V V A A A mJ W C C R07DS0716EJ0100 Rev.
1.
00 Apr 17, 2012 Page 1 of 7 RJF0611DPD Target Specifications Typical Operation Characteristics Item Input voltage Input current (Gate non shut down) Input current (Gate shut down) Shut down temperature Gate operation voltage Drain current (Current limitation value) Note: 4.
Pulse test Symbol VIH VIL IIH1 IIH2 IIL IIH(sd)1 IIH(sd)2 Tsd Vop ID limt Min 3.
5 — — — — — — — 3.
5 30...


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