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TGA2620-SM

TriQuint Semiconductor
Part Number TGA2620-SM
Manufacturer TriQuint Semiconductor
Description Driver Amplifier
Published Apr 2, 2016
Detailed Description Applications  Commercial and Military Radar  Communications TGA2620-SM 16 – 18GHz Driver Amplifier Product Features ...
Datasheet PDF File TGA2620-SM PDF File

TGA2620-SM
TGA2620-SM

Overview
Applications  Commercial and Military Radar  Communications TGA2620-SM 16 – 18GHz Driver Amplifier Product Features  Frequency Range: 16 – 18GHz  PSAT: 18.
5dBm  P1dB: 16.
5dBm  Small Signal Gain: 20dB  Input Return Loss: 16dB  Output Return Loss: 25dB  Bias: VD = 6V, IDQ = 30mA, VG = -0.
6V Typical  Package Dimensions: 3 x 3 x 0.
53 mm QFN 3x3 mm 14L Functional Block Diagram 14 13 12 11 1 10 29 38 General Description TriQuint’s TGA2620-SM is a package Ku-band MMIC driver amplifier fabricated on TriQuint’s 0.
15um GaAs pHEMT production process.
Operating from 16-18GHz, the TGA2620-SM provides more than 18.
5dBm saturated output power, 16.
5dBm P1dB and 20dB small signal gain.
Fully matched to 50 ohms with integrated DC blocking capacitors on both I/O ports allows for simple system integration.
The TGA2620-SM is an ideal choice for general purpose amplification across both commercial and military Ku-band platforms.
4 567 Pad Configuration Pad No.
1, 3, 8, 10 2 4 - 7, 11, 14 9 12 13 Symbol GND RF In N/C RF Out VD VG The TGA2620-SM is available in a low cost, surface mount, 14-lead 3x3mm AIN QFN package base with air cavity Liquid Crystal Polymer (LCP) lid.
Lead-free and RoHS compliant Evaluation Boards are available upon request.
Ordering Information Part ECCN Description TGA2620-SM EAR99 16 – 18GHz Driver Amplifier Preliminary Datasheet: Rev - 07-25-14 © 2014 TriQuint - 1 of 14 - Disclaimer: Subject to change without notice www.
triquint.
com Absolute Maximum Ratings Parameter Value Drain Voltage (VD) Gate Voltage Range (VG) Drain Current (ID) Gate Current (IG) Power Dissipation, 85°C (PDISS) Input Power, CW, 50 Ω, (PIN) Channel temperature (TCH) Mounting Temperature (30 Seconds) 6.
5V -2 to 0V 65mA -0.
5 to 5mA 0.
3W 15dBm 150°C 260°C Storage Temperature -55 to 150°C Operation of this device outside the parameter ranges given above may cause permanent damage.
These are stress ratings only, and functional operation of the device at these condit...


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