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2SK3161L

Renesas
Part Number 2SK3161L
Manufacturer Renesas
Description N-Channel MOSFET
Published Apr 3, 2016
Detailed Description 2SK3161(L), 2SK3161(S) Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS =90 mΩ typ....
Datasheet PDF File 2SK3161L PDF File

2SK3161L
2SK3161L

Overview
2SK3161(L), 2SK3161(S) Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS =90 mΩ typ.
• High speed switching • 4 V gate drive device can be driven from 5 V source Outline REJ03G1086-0300 (Previous: ADE-208-734A) Rev.
3.
00 Sep 07, 2005 RENESAS Package code: PRSS0004AE-A (Package name: LDPAK(L)) 4 RENESAS Package code: PRSS0004AE-B (Package name: LDPAK(S)-(1)) D 4 G 12 3 123 S 1.
Gate 2.
Drain 3.
Source 4.
Drain Rev.
3.
00 Sep 07, 2005 page 1 of 8 2SK3161 Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1.
PW ≤ 10 µs, duty cycle ≤ 1 % 2.
Value at Tc = 25°C 3.
Value at Tch = 25°C, Rg ≥ 50 Ω Symbol VDSS VGSS ID ID(pulse)Note1 IDR IAP Note3 EAR Note3 Pch Note2 Tch Tstg Ratings 200 ±20 15 60 15 15 15 75 150 –55 to +150 (Ta = 25°C) Unit V V A A A A m...


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