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V10D202C

Vishay
Part Number V10D202C
Manufacturer Vishay
Description Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Published Apr 4, 2016
Detailed Description www.vishay.com V10D202C Vishay General Semiconductor Dual High-Voltage TMBS® (Trench MOS Barrier Schottky) Rectifier ...
Datasheet PDF File V10D202C PDF File

V10D202C
V10D202C

Overview
www.
vishay.
com V10D202C Vishay General Semiconductor Dual High-Voltage TMBS® (Trench MOS Barrier Schottky) Rectifier eSMP® Series SMPD (TO-263AC) K 1 2 Top View Bottom View V10D202C Anode 1 K Anode 2 Cathode ADDITIONAL RESOURCES 3D 3D 3D Models PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 5.
0 A (TA = 125 °C) TJ max.
Package 2 x 5.
0 A 200 V 100 A 0.
67 V 175 °C SMPD (TO-263AC) Circuit configuration Common cathode FEATURES • Trench MOS Schottky technology generation 2 Available • Very low profile - typical height of 1.
7 mm • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available: - Automotive ordering code: base P/NHM3 • Material categorization: for definitions of compliance please see www.
vishay.
com/doc?99912 TYPICAL APPLICATIONS For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection.
MECHANICAL DATA Case: SMPD (TO-263AC) Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant Base P/NHM3_X - halogen-free, RoHS-compliant, and AEC-Q101 qualified (X_denotes revision code e.
g.
A, B, .
.
.
) Terminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 M3 and HM3 suffix meets JESD 201 class 2 whisker test Polarity: As marked MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Maximum repetitive peak reverse voltage Maximum average forward rectified current (fig.
1) per device per diode VRRM IF(AV) Maximum DC reverse voltage VDC Peak forward surge current 8.
3 ms single half sine-wave superimposed on rated load IFSM Voltage rate of change (rated VR) Operating junction and storage temperature range dV/dt TJ, TSTG V10D202C 200 10 5 160 100 10 000 -40 to +175 UNIT V A V A V/μs °C Revision: 27-Feb-2020 1 Document Number: 87746 For technical questions ...


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