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SSE04N60SL

SeCoS
Part Number SSE04N60SL
Manufacturer SeCoS
Description N-Ch Enhancement Mode Power MOSFET
Published Apr 4, 2016
Detailed Description Elektronische Bauelemente SSE04N60SL 4A , 600V , RDS(ON) 2.4Ω N-Ch Enhancement Mode Power MOSFET RoHS Compliant Produc...
Datasheet PDF File SSE04N60SL PDF File

SSE04N60SL
SSE04N60SL

Overview
Elektronische Bauelemente SSE04N60SL 4A , 600V , RDS(ON) 2.
4Ω N-Ch Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen free DESCRIPTION The SSE04N60SL is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDS(on) and gate charge for most of the synchronous buck converter applications .
TO-220P FEATURES Advanced high cell density Trench technology Super Low Gate Charge Excellent CdV/dt effect decline 100% EAS Guaranteed Green Device Available 1 Gate 2 Drain 3 Source REF.
A B C D E F G Millimeter Min.
Max.
9.
3 10.
6 14.
2 16.
5 2.
7 BSC.
12.
6 14.
7 1.
0 1.
8 0.
4 1.
0 3.
6 4.
8 REF.
H I J K L M Millimeter Min.
Max.
2.
54 BCS.
1.
8 2.
9 2.
6 3.
95 0.
3 0.
6 5.
8 7.
0 1.
2 1.
45 ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Rating Drain-Source Voltage VDS 600 Gate-Source Voltage VGS ±30 Continuous Drain Current TC=25°C TC=100°C ID 4 2.
5 Pulsed Drain Current IDM 16 Total Power Dissipation Single Pulse Avalanche Energy 1 TC=25°C Derate above 25°C PD EAS 100 0.
8 217 Operating Junction and Storage Temperature Range TJ, TSTG -55~150 Thermal Resistance Rating Maximum Thermal Resistance Junction-Ambient RθJA 62.
5 Maximum Thermal Resistance Junction-Case Notes: 1.
L=30mH,IAS=3.
45A, VDD=155V, RG=25Ω, Starting TJ =25°C RθJC 1.
25 Unit V V A A A W mJ °C °C / W °C / W http://www.
SeCoSGmbH.
com/ 17-Jul-2014 Rev.
A Any changes of specification will not be informed individually.
Page 1 of 5 Elektronische Bauelemente SSE04N60SL 4A , 600V , RDS(ON) 2.
4Ω N-Ch Enhancement Mode Power MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Min.
Typ.
Max.
Unit Teat Conditions Static Drain-Source Breakdown Voltage Gate-Threshold Voltage BVDSS 600 - - V VGS=0, ID= 250µA VGS(th) 2 - 4 V VDS=VGS, ID=250µA Gate-Source Leakage Current IGSS - - ±100 nA VGS= ±30V Drain-Source Leakage Current IDSS - - 1 µA VDS=600V,...


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