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MBR10H100CT

Taiwan Semiconductor
Part Number MBR10H100CT
Manufacturer Taiwan Semiconductor
Description Schottky Barrier Rectifier
Published Apr 5, 2016
Detailed Description MBR10H100CT – MBR10H200CT Taiwan Semiconductor 10A, 100V - 200V Schottky Barrier Rectifier FEATURES ● AEC-Q101 qualifi...
Datasheet PDF File MBR10H100CT PDF File

MBR10H100CT
MBR10H100CT

Overview
MBR10H100CT – MBR10H200CT Taiwan Semiconductor 10A, 100V - 200V Schottky Barrier Rectifier FEATURES ● AEC-Q101 qualified available ● Low power loss, high efficiency ● Guard ring for overvoltage protection ● High surge current capability ● RoHS Compliant ● Halogen-free according to IEC 61249-2-21 APPLICATIONS ● Switching mode power supply (SMPS) ● Adapters ● DC to DC converters KEY PARAMETERS PARAMETER VALUE UNIT IF 10 A VRRM 100 - 200 V IFSM 120 A TJ MAX 175 °C Package TO-220AB Configuration Dual dies MECHANICAL DATA ● Case: TO-220AB ● Molding compound meets UL 94V-0 flammability rating ● Terminal: Matte tin plated leads, solderable per J-STD-002 ● Mounting torque: 0.
56 N⋅m maximum ● Meet JESD 201 class 2 whisker test ● Polarity: As marked ● Weight: 1.
88g (approximately) TO-220AB ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER MBR SYMBOL 10H100CT Marking code on the device MBR 10H100CT Repetitive peak reverse voltage VRRM 100 MBR 10H150CT MBR 10H150CT 150 Reverse voltage, total rms value VR(RMS) 70 105 Forward current Surge peak forward current, 8.
3ms single half sine wave superimposed on rated load Peak repetitive reverse surge current(1) Peak repetitive forward current (Rated VR, Square wave, 20KHz) Critical rate of rise of off-state voltage IF IFSM IRRM IFRM dv/dt 10 120 1.
0 10 10,000 Junction temperature Storage temperature Notes: 1.
tp = 2.
0μs, 1.
0KHz TJ TSTG -55 to +175 -55 to +175 MBR 10H200CT MBR 10H200CT 200 140 0.
5 UNIT V V A A A A V/μs °C °C 1 Version: J2104 MBR10H100CT – MBR10H200CT Taiwan Semiconductor THERMAL PERFORMANCE PARAMETER Junction-to-case thermal resistance SYMBOL RӨJC TYP 1.
5 UNIT °C/W ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) PARAMETER CONDITIONS SYMBOL MBR10H100CT MBR10H150CT IF = 5A, TJ = 25°C MBR10H200CT Forward voltage per diode(1) MBR10H100CT MBR10H150CT IF = 10A, TJ = 25°C MBR10H200CT VF MBR10H100CT MBR10H150CT IF = 5A, TJ = 125°C MBR10...


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