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MBR16100

Taiwan Semiconductor
Part Number MBR16100
Manufacturer Taiwan Semiconductor
Description Schottky Barrier Rectifier
Published Apr 5, 2016
Detailed Description MBR1635 thru MBR16150 Taiwan Semiconductor CREAT BY ART FEATURES - Low power loss, high efficiency - Guardring for over...
Datasheet PDF File MBR16100 PDF File

MBR16100
MBR16100

Overview
MBR1635 thru MBR16150 Taiwan Semiconductor CREAT BY ART FEATURES - Low power loss, high efficiency - Guardring for overvoltage protection - High surge current capability - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC Schottky Barrier Rectifier - Halogen-free according to IEC 61249-2-21 definition MECHANICAL DATA Case: TO-220AC Molding compound, UL flammability classification rating 94V-0 Base P/N with suffix "G" on packing code - halogen-free Base P/N with prefix "H" on packing code - AEC-Q101 qualified Terminal: Matte tin plated leads, solderable per JESD22-B102 Meet JESD 201 class 1A whisker test, with prefix "H" on packing code meet JESD 201 class 2 whisker test Polarity: As marked Mounting torque: 5 in-lbs maximum Weight: 1.
86 g (approximately) TO-220AC MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25℃ unless otherwise noted) PARAMETER MBR MBR MBR MBR MBR MBR MBR SYMBOL 1635 1645 1650 1660 1690 16100 16150 Maximum repetitive peak reverse voltage VRRM 35 45 50 60 90 100 150 Maximum RMS voltage Maximum DC blocking voltage VRMS 24 31 35 42 63 70 105 VDC 35 45 50 60 90 100 150 Maximum average forward rectified current IF(AV) 16 Peak repetitive forward current (Rated VR, Square Wave, 20KHz) IFRM 32 UNIT V V V A A Peak forward surge current, 8.
3 ms single half sine-wave superimposed on rated load IFSM 150 A Peak repetitive reverse surge current (Note 1) Maximum instantaneous forward voltage (Note 2) IF=16A, TJ=25℃ IF=16A, TJ=125℃ IRRM 1.
0 VF 0.
63 0.
57 0.
5 A 0.
75 0.
85 0.
95 V 0.
65 0.
75 0.
92 Maximum reverse current @ rated VR TJ=25 ℃ TJ=125 ℃ Voltage rate of change (Rated VR) Typical thermal resistance Operating junction temperature range Storage temperature range Note 1: tp = 2.
0 μs, 1.
0KHz Note 2: Pulse test with PW=300μs, 1% duty cycle IR dV/dt RθJC TJ TSTG 0.
5 15 0.
5 10 10000 3 - 55 to +150 - 55 to +150 0.
3 7.
5 0.
1 mA 5 V/μs OC/W OC OC Document Number: DS_D1308053 Version: J13 MBR1635 thru MBR161...


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