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BCY78-VII

Central Semiconductor
Part Number BCY78-VII
Manufacturer Central Semiconductor
Description SILICON PNP TRANSISTORS
Published Apr 5, 2016
Detailed Description BCY78, VII, VIII, IX, X BCY79, VII, VIII, IX, X SILICON PNP TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTIO...
Datasheet PDF File BCY78-VII PDF File

BCY78-VII
BCY78-VII

Overview
BCY78, VII, VIII, IX, X BCY79, VII, VIII, IX, X SILICON PNP TRANSISTORS w w w.
c e n t r a l s e m i .
c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR BCY78 and BCY79 series types are silicon PNP epitaxial planar transistors, mounted in a hermetically sealed metal case, designed for low noise amplifier and switching applications.
MARKING: FULL PART NUMBER TO-18 CASE MAXIMUM RATINGS: (TA=25°C unless otherwise noted) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current Peak Base Current Power Dissipation Power Dissipation (TC=25°C) Operating and Storage Junction Temperature Thermal Resistance Thermal Resistance SYMBOL VCBO VCEO VEBO IC ICM IBM PD PD TJ, Tstg JA JC BCY78 32 BCY79 45 32 45 5.
0 100 200 200 340 1.
0 -65 to +200 450 150 UNITS V V V mA mA mA mW W °C °C/W °C/W ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN ICBO VCB=Rated VCBO ICBO VCB=Rated VCBO, TA=150°C IEBO VEB=5.
0V BVCBO IC=10μA (BCY78) 32 BVCBO IC=10μA (BCY79) 45 BVCEO IC=2.
0mA (BCY78) 32 BVCEO IC=2.
0mA (BCY79) 45 BVEBO IE=1.
0μA 5.
0 VCE(SAT) IC=10mA, IB=250μA VCE(SAT) IC=100mA, IB=2.
5mA VBE(SAT) IC=10mA, IB=250μA 0.
60 VBE(SAT) IC=100mA, IB=2.
5mA 0.
70 VBE(ON) VCE=5.
0V, IC=2.
0mA 0.
60 MAX 15 10 20 0.
25 0.
80 0.
85 1.
20 0.
75 BCY78-VII BCY78-VIII BCY78-IX BCY79-VII BCY79-VIII BCY79-IX MIN TYP MAX MIN MAX MIN MAX hFE VCE=5.
0V, IC=10μA - 140 - 30 - 40 - hFE VCE=5.
0V, IC=2.
0mA 120 - 220 180 310 250 460 hFE VCE=1.
0V, IC=10mA 80 - - 120 400 160 630 hFE VCE=1.
0V, IC=100mA 40 - - 45 - 60 - UNITS nA μA nA V V V V V V V V V V BCY78-X BCY79-X MIN MAX 100 380 630 240 1000 60 - R4 (4-June 2013) BCY78, VII, VIII, IX, X BCY79, VII, VIII, IX, X SILICON PNP TRANSISTORS ELECTRICAL CHARACTERISTICS - Continued: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN fT VCE=5.
0V, IC=10mA, f=100MHz 100 Cob VCB=10V, IE=0, f=1.
0MHz Cib VEB=0.
5V, IC...


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