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BLF6G22L-40BN

Ampleon
Part Number BLF6G22L-40BN
Manufacturer Ampleon
Description Power LDMOS transistor
Published Apr 5, 2016
Detailed Description BLF6G22L-40BN Power LDMOS transistor Rev. 2 — 1 September 2015 Product data sheet 1. Product profile 1.1 General desc...
Datasheet PDF File BLF6G22L-40BN PDF File

BLF6G22L-40BN
BLF6G22L-40BN

Overview
BLF6G22L-40BN Power LDMOS transistor Rev.
2 — 1 September 2015 Product data sheet 1.
Product profile 1.
1 General description 40 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz.
Table 1.
Typical performance RF performance at Tcase = 25 C in a common source class-AB production test circuit.
Mode of operation f VDS PL(AV) Gp D (MHz) (V) (W) (dB) (%) 2-carrier W-CDMA 2110 to 2170 28 2.
5 19 16 ACPR (dBc) 50[1] [1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 8.
4 dB at 0.
01 % probability on CCDF per carrier; carrier spacing 5 MHz CAUTION This device is sensitive to ElectroStatic Discharge (ESD).
Therefore care should be taken during transport and handling.
1.
2 Features and benefits  Typical 2-carrier W-CDMA performance at frequencies of 2110 MHz and 2170 MHz, a supply voltage of 28 V and an IDq of 345 mA:  Average output power = 2.
5 W  Power gain = 19 dB (typ)  Efficiency = 16 %  ACPR = 50 dBc  Easy power contro...


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