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V40DM120CHM3

Vishay
Part Number V40DM120CHM3
Manufacturer Vishay
Description Dual High Voltage Trench MOS Barrier Schottky Rectifier
Published Apr 6, 2016
Detailed Description www.vishay.com V40DM120C-M3, V40DM120CHM3 Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky R...
Datasheet PDF File V40DM120CHM3 PDF File

V40DM120CHM3
V40DM120CHM3

Overview
www.
vishay.
com V40DM120C-M3, V40DM120CHM3 Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.
46 V at IF = 5 A TMBS ® eSMP® Series TO-263AC (SMPD) K 1 2 Top View Bottom View V40DM120C PIN 1 K PIN 2 HEATSINK PRIMARY CHARACTERISTICS IF(AV) 2 x 20 A VRRM 120 V IFSM VF at IF = 20 A (TA = 125 °C) TJ max.
250 A 0.
64 V 150 °C Package TO-263AC (SMPD) Diode variations Common cathode FEATURES • Trench MOS Schottky technology • Very low profile - typical height of 1.
7 mm • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available: - Automotive ordering code: base P/NHM3 • Material categorization: for definitions of compliance please see www.
vishay.
com/doc?99912 TYPICAL APPLICATIONS For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection in commercial, inductrial, and automotive application.
MECHANICAL DATA Case: TO-263AC (SMPD) Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant Base P/NHM3 - halogen-free, RoHS-compliant, and AEC-Q101 qualified Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 M3 and HM3 suffix meets JESD 201 class 2 whisker test Polarity: As marked MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Maximum repetitive peak reverse voltage Maximum average forward rectified current (fig.
1) per device per diode VRRM IF(AV) Peak forward surge current 10 ms single half sine-wave superimposed on rated load per diode IFSM Voltage rate of change (rated VR) Operating junction and storage temperature range dV/dt TJ, TSTG V40DM120C 120 40 20 250 10 000 -40 to +150 UNIT V A A V/μs °C Revision: 06-Feb-15 1 Document Number: 89991 For technical questions within your region: DiodesAm...


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