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JCS3N25VT

JILIN SINO-MICROELECTRONICS
Part Number JCS3N25VT
Manufacturer JILIN SINO-MICROELECTRONICS
Description N-CHANNEL MOSFET
Published Apr 6, 2016
Detailed Description N R N-CHANNEL MOSFET JCS3N25T MAIN CHARACTERISTICS Package ID 3 A VDSS 250 V Rdson（@Vgs=10V） 1.74Ω Qg 4.4 nC z ...
Datasheet PDF File JCS3N25VT PDF File

JCS3N25VT
JCS3N25VT


Overview
N R N-CHANNEL MOSFET JCS3N25T MAIN CHARACTERISTICS Package ID 3 A VDSS 250 V Rdson（@Vgs=10V） 1.
74Ω Qg 4.
4 nC z z z UPS APPLICATIONS z High frequency switching mode power supply z Electronic ballast z UPS z z Crss ( 4.
5pF) z z z dv/dt zRoHS FEATURES zLow gate charge zLow Crss (typical 4.
5pF ) zFast switching z100% avalanche tested zImproved dv/dt capability zRoHS product ORDER MESSAGE Order codes Marking JCS3N25VT-O-V-N-B JCS3N25RT-O-R-N-B JCS3N25RT-O-R-N-A JCS3N25CT-O-C-N-B JCS3N25FT-O-F-N-B JCS3N25VT JCS3N25RT JCS3N25RT JCS3N25CT JCS3N25FT Package IPAK DPAK DPAK TO-220C TO-220MF Halogen Free NO NO NO NO NO Packaging Tube Tube Brede Tube Tube Device Weight 0.
35 g(typ) 0.
30 g(typ) 0.
30 g(typ) 2.
15 g(typ) 2.
20 g(typ) ：201302C 1/12 R JCS3N25T ABSOLUTE RATINGS (Tc=25℃) Parameter Symbol Value JCS3N25VT/RT/CT JCS3N25FT － Drain-Source Voltage VDSS 250 250 Drain Current -continuous ID T=25℃ T=100℃ 3 1.
98 3* 1.
55* （ 1） Drain Current - pulse （note 1） IDM 12 12* Gate-Source Voltage VGSS ±30 （ 2） Single Pulsed Avalanche Energy （note 2） EAS 305 （ 1） Avalanche Current（note 1） IAR 3 （ 1） Repetitive Avalanche Energy （note 1） EAR 10.
1 4.
1 （ 3） Peak Diode Recovery dv/dt（note 3） dv/dt 4.
5 Power Dissipation PD TC=25℃ -Derate above 25℃ 101 0.
81 41 0.
33 Operating and Storage Temperature Range TJ，TSTG -55～+150 Maximum Lead Temperature for Soldering Purposes TL 300 * *Drain current limited by maximum junction temperature Unit V A A A V mJ A mJ V/ns W W/℃ ℃ ℃ ：201302C 2/12 R ELECTRICAL CHARACTERISTICS JCS3N25T Parameter Symbol Tests conditions Min Typ Max Units Off –Characteristics － Drain-Source Voltage BVDSS ID=250μA, VGS=0V 250 - - V Breakdown Voltage Temperature Coefficient ΔBVDSS/Δ ID=250μA, referenced to TJ 25℃ - 0.
64 - V/℃ Zero Gate Voltage Drain Current Gate-body leakage current, forward IDSS IGSSF VDS=250V,VGS=0V, TC=25℃ VDS=200V, TC=125℃ VDS=0...


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