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JCS5N50FC

JILIN SINO-MICROELECTRONICS
Part Number JCS5N50FC
Manufacturer JILIN SINO-MICROELECTRONICS
Description N-CHANNEL MOSFET
Published Apr 6, 2016
Detailed Description N R N-CHANNEL MOSFET JCS5N50C MAIN CHARACTERISTICS Package ID VDSS Rdson（Vgs=10V） Qg 5A 500 V 1.45Ω 14nC z z ...
Datasheet PDF File JCS5N50FC PDF File

JCS5N50FC
JCS5N50FC

Overview
N R N-CHANNEL MOSFET JCS5N50C MAIN CHARACTERISTICS Package ID VDSS Rdson（Vgs=10V） Qg 5A 500 V 1.
45Ω 14nC z z z UPS APPLICATIONS z High frequency switching mode power supply z Electronic ballast z UPS z z Crss ( 14pF) z z z dv/dt zRoHS FEATURES zLow gate charge zLow Crss (typical 14pF ) zFast switching z100% avalanche tested zImproved dv/dt capability zRoHS product ORDER MESSAGE Order codes JCS5N50VC-O-V-N-B JCS5N50RC-O-R-N-B JCS5N50RC-O-R-N-A JCS5N50CC-O-C-N-B JCS5N50FC-O-F-N-B Marking JCS5N50VC JCS5N50RC JCS5N50RC JCS5N50CC JCS5N50FC Package IPAK DPAK DPAK TO-220C TO-220MF Halogen Free NO NO NO NO NO Packaging Tube Tube Brede Tube Tube Device Weight 0.
35 g(typ) 0.
30g(typ) 0.
30g(typ) 2.
15 g(typ) 2.
20 g(typ) ：201402B 1/14 R ABSOLUTE RATINGS (Tc=25℃) JCS5N50C Parameter Symbol JCS5N50VC/RC Value JCS5N50CC － Drain-Source Voltage VDSS 500 Drain Current -continuous ID T=25℃ T=100℃ 5 3.
16 （ 1） Drain Current - pulse （note 1） IDM 20 Gate-Source Voltage VGSS ±30 （ 2） Single Pulsed Avalanche Energy（note 2） EAS 305 （ 1） Avalanche Current（note 1） IAR 5 （ 1） Repetitive Avalanche Energy （note 1） EAR 10.
1 （ 3） Peak Diode Recovery dv/dt dv/dt 4.
5 （note 3） Power Dissipation PD TC=25℃ -Derate above 25℃ 91 0.
73 101 0.
81 Operating and Storage Temperature Range TJ，TSTG -55～+150 Maximum Lead Temperature for Soldering Purposes TL 300 * *Drain current limited by maximum junction temperature JCS5N50FC 500 5* 3.
16* 20* 41 0.
33 Unit V A A A V mJ A mJ V/ns W W/℃ ℃ ℃ ：201402B 2/14 R ELECTRICAL CHARACTERISTICS JCS5N50C Parameter Symbol Tests conditions Min Typ Max Units Off –Characteristics － Drain-Source Voltage BVDSS ID=250μA, VGS=0V 500 - - V Breakdown Voltage Temperature Coefficient ΔBVDSS/Δ ID=250μA, referenced to TJ 25℃ - 0.
64 - V/℃ Zero Gate Voltage Drain Current IDSS VDS=500V,VGS=0V, TC=25℃ VDS=400V, TC=125℃ - - 1 μA - - 10 μA Gate-body leakage cu...


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