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JCS4N60C

JILIN SINO-MICROELECTRONICS
Part Number JCS4N60C
Manufacturer JILIN SINO-MICROELECTRONICS
Description N-CHANNEL MOSFET
Published Apr 6, 2016
Detailed Description N R N-CHANNEL MOSFET JCS4N60C MAIN CHARACTERISTICS Package ID 4.0 A VDSS 600 V Rdson（Vgs=10V） 2.5Ω Qg 9nC   ...
Datasheet PDF File JCS4N60C PDF File

JCS4N60C
JCS4N60C

Overview
N R N-CHANNEL MOSFET JCS4N60C MAIN CHARACTERISTICS Package ID 4.
0 A VDSS 600 V Rdson（Vgs=10V） 2.
5Ω Qg 9nC    LED APPLICATIONS  High frequency switching mode power supply  Electronic ballast  LED power supply   Crss ( 12pF)    dv/dt RoHS FEATURES Low gate charge Low Crss (typical 12pF ) Fast switching 100% avalanche tested Improved dv/dt capability RoHS product ORDER MESSAGE Order codes Marking JCS4N60VC-O-V-N-B JCS4N60V JCS4N60RC-O-R-N-B JCS4N60R JCS4N60CC-O-C-N-B JCS4N60C JCS4N60FC-O-F-N-B JCS4N60F JCS4N60FC-O-F2-N- JCS4N60F B Package IPAK DPAK TO-220C TO-220MF TO-220MF -K2 Halogen Free NO NO NO NO NO Packaging Tube Tube Tube Tube Tube Device Weight 0.
35 g(typ) 0.
30 g(typ) 2.
15 g(typ) 2.
20 g(typ) 2.
20 g(typ) ：201412C 1/15 R ABSOLUTE RATINGS (Tc=25℃) JCS4N60C Parameter Symbol JCS4N60VC/RC Value JCS4N60CC － Drain-Source Voltage VDSS 600 Drain Current -continuous ID T=25℃ T=100℃ 4.
0 2.
5 （ 1） Drain Current - pulse （note 1） IDM 16 Gate-Source Voltage VGSS ±30 （ 2） Single Pulsed Avalanche Energy note 2） EAS 260 （ 1） Avalanche Current （note 1） IAR 4.
0 （ 1） Repetitive Avalanche Current （note 1） EAR 11.
0 （ 3） Peak Diode Recovery dv/dt （note 3） dv/dt 5.
5 Power Dissipation PD TC=25℃ -Derate above 25℃ 51 0.
39 100 0.
80 Operating and Storage Temperature Range TJ，TSTG -55～+150 Maximum Lead Temperature for Soldering Purposes TL 300 * *Drain current limited by maximum junction temperature JCS4N60FC Unit V 4.
0* A 2.
5* A 16* A V mJ A mJ V/ns 33 W W/ 0.
26 ℃ ℃ ℃ ：201412C 2/15 R ELECTRICAL CHARACTERISTICS JCS4N60C Parameter Symbol Tests conditions Min Typ Max Units Off –Characteristics － Drain-Source Voltage BVDSS ID=250μA, VGS=0V 600 - - V Breakdown Voltage Temperature Coefficient ΔBVDSS/Δ ID=250μA, TJ 25℃ referenced to - 0.
65 - V/℃ Zero Gate Voltage Drain Current IDSS VDS=600V,VGS=0V, TC=25℃ VDS=480V, TC=125℃ ...


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