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K10N60

Infineon
Part Number K10N60
Manufacturer Infineon
Description Fast IGBT
Published Apr 7, 2016
Detailed Description SKP10N60A SKW10N60A Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled Diode  75%...
Datasheet PDF File K10N60 PDF File

K10N60
K10N60

Overview
SKP10N60A SKW10N60A Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled Diode  75% lower Eoff compared to previous generation combined with low conduction losses C  Short circuit withstand time – 10 s  Designed for: - Motor controls - Inverter G E  NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switching capability  Very soft, fast recovery anti-parallel Emitter Controlled Diode PG-TO-220-3-1 PG-TO-247-3  Pb-free lead plating; RoHS compliant  Qualified according to JEDEC1 for target applications  Complete product spectrum and PSpice Models : http://www.
infineon.
com/igbt/ Type SKP10N60A SKW10N60A VCE IC VCE(sat) Tj Marking Package 600V 10A 2.
3V 150C K10N60 PG-TO-220-3-1 600V 10A 2.
3V 150C K10N60 PG-TO-247-3 Maximum Ratings Parameter Collector-emitter voltage DC collector current TC = 25C TC = 100C Pulsed collector current, tp li...


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