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DG808BC45

Part Number	DG808BC45
Manufacturer	Dynex
Description	Gate Turn-off Thyristor
Published	Apr 7, 2016
Detailed Description	Replaces DS5914-2 DG808BC45 Gate Turn-off Thyristor DS5914-3 November 2021 (LN41298) FEATURES KEY PARAMETERS • Do...
Datasheet	DG808BC45 PDF File

Overview

Replaces DS5914-2 DG808BC45 Gate Turn-off Thyristor DS5914-3 November 2021 (LN41298) FEATURES KEY PARAMETERS • Double Side Cooling • High Reliability In Service • High Voltage Capability • Fault Protection Without Fuses • High Surge Current Capability • Turn-off Capability Allows Reduction in Equipment Size and Weight.
Low Noise Emission Reduces Acoustic Cladding Necessary For Environmental Requirements ITCM VDRM I(AV) dVD/dt* dIT/dt 3000A 4500V 950A 1000V/µs 400A/µs APPLICATIONS • Variable speed AC motor drive inverters (VSD- AC) including Traction drives • Uninterruptable Power Supplies • High Voltage Converters • Choppers • Welding • Induction Heating • DC/DC Converters Outline type code: C (See Package Details for further information) Fig.
1 Package outline VOLTAGE RATINGS Type Number DG808BC45 Repetitive Peak Off-state Voltage VDRM (V) 4500 Repetitive Peak Reverse Voltage VRRM (V) 16 Conditions Tvj = 125°C, IDM =100mA, IRRM = 50mA CURRENT RATINGS Symbol ITCM IT(AV) IT(RMS) Parameter Repetitive peak controllable on-state current Mean on-state current RMS on-state current Conditions VD = 66%VDRM, Tj = 125°C, dIGQ/dt = 40A/s, CS = 4 F THS = 80°C, Double side cooled.
Half sine 50Hz THS = 80°C, Double side cooled.
Half sine 50Hz Max.
3000 950 1490 Units A A A www.
dynexsemi.
com 1/12 DG808BC45 SURGE RATINGS Symbol Parameter ITSM I2t diT/dt Surge (non repetitive) on-state current I2t for fusing Critical rate of rise of on-state current dVD/dt Rate of rise of off-state voltage LS Peak stray inductance in snubber circuit GATE RATINGS Test Conditions 10ms half sine.
Tj = 125°C 10ms half sine.
Tj = 125°C VD = 3000V, IT = 3000A, Tj = 125°C, IFG > 40A, Rise time > 1.
0 s To 66% VDRM; RGK  1.
5, Tj = 125°C To 66% VDRM; VRG  -2V, Tj = 125°C IT = 3000A, VD = VDRM, Tj = 125oC, dIGQ = 40A/us, CS = 4.
0uF Max.
Units 16.
0 1.
28 400 100 1000 200 kA MA2s A/s V/s V/s nH Symbol Parameter VRGM IFGM PFG(AV) PRGM diGQ/dt tON(min) tOFF(min) Pea...

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DG808BC45 Gate Turn-off Thyristor - Dynex

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