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LDTC123TKT1G

Part Number	LDTC123TKT1G
Manufacturer	Leshan Radio Company
Description	Bias Resistor Transistor
Published	Apr 7, 2016
Detailed Description	LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor ...
Datasheet	LDTC123TKT1G PDF File

Overview

LESHAN RADIO COMPANY, LTD.
Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network • Applications Inverter, Interface, Driver • Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit).
2) The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input.
They also have the advantage of almost completely eliminating parasitic effects.
3) Only the on/off conditions need to be set for operation, making the device design easy.
• We declare that the material of product compliance with RoHS requirements.
zAbsolute maximum ratings (Ta=25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector Power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC Pc Tj Tstg Limits 50 50 5 100 200 150 −55 to +150 Unit V V V mA mW °C °C LDTC123TKT1G 3 1 2 SC-89 1 BASE R1 3 COLLECTOR 2 EMITTER DEVICE MARKING AND RESISTOR VALUES Device Marking R1 (K) R2 (K) Shipping LDTC123TKT1G H1 2.
2 - 3000/Tape & Reel LDTC123TKT3G H1 2.
2 - 10000/Tape & Reel zElectrical characteristics (Ta=25°C) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Input resistance Transition frequency ∗ Characteristics of built-in transistor.
Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) hFE R1 fT ∗ Min.
50 50 5 − − − 100 1.
54 − Typ.
− − − − − − 250 2.
2 250 Max.
− − − 0.
5 0.
5 0.
3 600 2.
86 − Unit V V V µA µA V − kΩ MHz Conditions IC=50µA IC=1mA IE=50µA VCB=50V VEB=4V IC/IB=5mA/0.
25mA IC=1mA , VCE=5V − VCB=10V , IE= −5mA , f=100MHz 1/3 LESHAN RADIO COMPANY, LTD.
LDTC123TKT1G zElectrical characteristic curves DC CURRENT GAIN : hFE 1k VCE=5V 500 200 100 50 Ta=100...

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LDTC123TKT1G Bias Resistor Transistor - Leshan Radio Company

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