DatasheetsPDF.com

HCD65R360S

Part Number	HCD65R360S
Manufacturer	SemiHow
Description	650V N-Channel Super Junction MOSFET
Published	Apr 8, 2016
Detailed Description	HCD65R360S_HCU65R360S June 2015 HCD65R360S / HCU65R360S 650V N-Channel Super Junction MOSFET FEATURES Originative Ne...
Datasheet	HCD65R360S PDF File

Overview

HCD65R360S_HCU65R360S June 2015 HCD65R360S / HCU65R360S 650V N-Channel Super Junction MOSFET FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 23 nC (Typ.
) Extended Safe Operating Area Lower RDS(ON) ȍ7\S#9GS=10V 100% Avalanche Tested BVDSS = 650 V RDS(on) typ ȍ ID = 11 A D-PAK I-PAK 2 1 1 32 3 HCD65R360S HCU65R360S 1.
Gate 2.
Drain 3.
Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current Drain Current Drain Current – Continuous (TC = 25୅) – Continuous (TC = 100୅) – Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy (Note 2) Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt 650 11 7 33 ρ20 300 3.
0 0.
6 15 Power Dissipation (TA = 25୅)* PD Power Dissipation (TC = 25୅) - Derate above 25୅ 2.
5 100 0.
8 TJ, TSTG TL Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds -55 to +150 300 Units V A A A V mJ A mJ V/ns W W W/୅ ୅ ୅ Thermal Resistance Characteristics Symbol Parameter RșJC RșJA Junction-to-Case Junction-to-Ambient* RșJA Junction-to-Ambient * When mounted on the minimum pad size recommended (PCB Mount) Typ.
---- Max.
1.
5 50 110 Units ୅/W క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳͥ͑͝ͻΦΟΖ͑ͣͦ͑͢͡ HCD65R360S_HCU65R360S Electrical Characteristics TJ=25 qC unless otherwise specified Symbol Parameter Test Conditions Min Typ Max Units On Characteristics VGS Gate Threshold Voltage Static Drain-Source RDS(ON) On-Resistance VDS = VGS, ID = 250 Ꮃ VGS = 10 V, ID = 5.
5 A 2.
8 -- Off Characteristics BVDSS IDSS IGSS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current VGS = 0 V, ID = 250 Ꮃ VDS = 650 V, VGS = 0 V VDS = 520 V, TJ = 1...

Similar Datasheet

HCD65R360S 650V N-Channel Super Junction MOSFET - SemiHow

@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)