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2SD601LT1

WEJ
Part Number 2SD601LT1
Manufacturer WEJ
Description NPN EPITAXIAL SILICON TRANSISTOR
Published Apr 8, 2016
Detailed Description RoHS 2SD601LT1 NPN EPITAXIAL SILICON TRANSISTOR PRE-AMPLIFIER,LOW LEVEL&LOW NOISE * Complement to S9015LT1 * Collector...
Datasheet PDF File 2SD601LT1 PDF File

2SD601LT1
2SD601LT1

Overview
RoHS 2SD601LT1 NPN EPITAXIAL SILICON TRANSISTOR PRE-AMPLIFIER,LOW LEVEL&LOW NOISE * Complement to S9015LT1 * Collector Current: Ic= 100mA D* Collector-Emitter Voltage:Vce= 45V * High Total Power Dissipation:Pc=225mW T* High Hfe And Good Linearity ABSOLUTE MAXIMUM RATINGS at Ta=25 .
,LCharacteristic Symbol Rating Collector-Base Voltage Vcbo 50 Collector-Emitter Voltage Vceo 45 OEmitter-Base Voltage Vebo 5 2.
9 1.
9 0.
95 0.
95 0.
4 Collector Current Ic 100 CCollector Dissipation Ta=25 * PD 225 Junction Temperature Tj 150 ICStorage Temperature Tstg -55-150 Unit V V V mA mW 1.
2.
4 1.
3 1 .
G AT E 2 .
SO U RC E R 3.
DRAIE U nit :m m ELECTRICAL CHARACTERISTICS at Ta=25 NCharact...


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