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TSM9933DCS

Taiwan Semiconductor
Part Number TSM9933DCS
Manufacturer Taiwan Semiconductor
Description -20V P-Channel Power MOSFET
Published Apr 8, 2016
Detailed Description TSM9933DCS -20V P-Channel Power MOSFET SOP-8 Pin Definition: 1. Source 1 8. Drain 1 2. Gate 1 7. Drain 1 3. Source...
Datasheet PDF File TSM9933DCS PDF File

TSM9933DCS
TSM9933DCS

Overview
TSM9933DCS -20V P-Channel Power MOSFET SOP-8 Pin Definition: 1.
Source 1 8.
Drain 1 2.
Gate 1 7.
Drain 1 3.
Source 2 6.
Drain 2 4.
Gate 2 5.
Drain 2 Key Parameter Performance Parameter Value VDS VGS = -4.
5V -20 60 RDS(on) (max) VGS = -2.
7V VGS = -2.
5V 78 85 Qg 6 Unit V mΩ nC Features ● Advance Trench Process Technology ● High Density Cell Design for Ultra Low On-resistance Ordering Information Part No.
Package Packing TSM9933DCS RL SOP-8 2.
5kps / 13’’ Reel TSM9933DCS RLG SOP-8 2.
5kps / 13’’ Reel Note: “G” denotes for Halogen- and Antimony-free as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds Block Diagram Dual P-Channel MOSFET Absolute Maximum Ratings (TA=25oC unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 4.
5V.
Pulsed Drain Current, VGS @ 4.
5V Continuous Source Current (Diode Conduction) (Note 1,2) Maximum Power Dissipation TA=25oC TA=70oC Operating Junction Temperature Operating Junction and Storage Temperature Range VDS VGS ID IDM IS PD TJ TJ, TSTG Thermal Performance Parameter Junction to Case Thermal Resistance Junction to Ambient Thermal Resistance (PCB mounted) Symbol RӨJC RӨJA Limit -20 ±12 -4.
7 -20 -2.
5 2 1.
3 +150 - 55 to +150 Limit 30 62.
5 Unit V V A A A W oC oC Unit oC/W oC/W 1/6 Version: D14 TSM9933DCS -20V P-Channel Power MOSFET Electrical Specifications (TJ=25oC unless otherwise noted) Parameter Conditions Symbol Static (Note 3) Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Body Leakage Zero Gate Voltage Drain Current On-State Drain Current Drain-Source On-State Resistance VGS = 0V, ID = -250µA VDS = VGS, ID = -250µA VGS = ±12V, VDS = 0V VDS = -20V, VGS = 0V VDS =-5V, VGS = -4.
5V VGS = -4.
5V, ID = -4.
7A VGS = -4.
5V, ID = -2.
9A VGS = -2.
7V, ID = -1.
5A BVDSS VGS(TH) IGSS IDSS ID(ON) RDS(ON) Forward Transconductance Diode Forward Voltage Dynamic (Note 4,5...


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