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V10D100CHM3

Vishay
Part Number V10D100CHM3
Manufacturer Vishay
Description Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Published Apr 8, 2016
Detailed Description www.vishay.com V10D100C-M3, V10D100CHM3 Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rec...
Datasheet PDF File V10D100CHM3 PDF File

V10D100CHM3
V10D100CHM3

Overview
www.
vishay.
com V10D100C-M3, V10D100CHM3 Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.
48 V at IF = 2.
5 A TMBS ® eSMP® Series TO-263AC (SMPD) K 1 2 Top View Bottom View V10D100C PIN 1 K PIN 2 HEATSINK PRIMARY CHARACTERISTICS IF(AV) 2 x 5.
0 A VRRM 100 V IFSM VF at IF = 5.
0 A (TA = 125 °C) TJ max.
100 A 0.
60 V 150 °C Package TO-263AC (SMPD) Diode variations Dual common cathode FEATURES • Trench MOS Schottky technology generation 2 • Very low profile - typical height of 1.
7 mm • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF ...


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