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V12WM100C-M3

Vishay
Part Number V12WM100C-M3
Manufacturer Vishay
Description Dual Trench MOS Barrier Schottky Rectifier
Published Apr 8, 2016
Detailed Description www.vishay.com V12WM100C-M3 Vishay General Semiconductor Dual Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.4...
Datasheet PDF File V12WM100C-M3 PDF File

V12WM100C-M3
V12WM100C-M3

Overview
www.
vishay.
com V12WM100C-M3 Vishay General Semiconductor Dual Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.
48 V at IF = 3 A TMBS® TO-252 (D-PAK) K A A V12WM100C AK A HEATSINK FEATURES • Trench MOS Schottky technology • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Material categorization: For definitions of compliance please see www.
vishay.
com/doc?99912 TYPICAL APPLICATIONS For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection.
PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF...


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